BSS110

BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.17 TA = 35 °C DC drain current, pulsed IDpuls -0.68 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 110 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -50 -1.5 -0.1 -2 -1 5.3 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 -0.1 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -10 nA Ω 10 VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = -10 V, ID = -0.17 A Semiconductor Group 2 12/05/1997 BSS 110 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.05 0.09 30 17 8 - S pF 40 25 12 ns 7 10 VDS≥ 2 * ID * RDS(on)max, ID = -0.17 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Rise time tr 12 18 VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Turn-off delay time td(off) 10 13 VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Fall time tf 20 27 VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 110 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.95 -0.17 -0.68 V -1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = -0.34 A Semiconductor Group 4 12/05/1997 BSS 110 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V -0.18 A 0.70 W 0.60 Ptot 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 ID -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0 20 40 60 80 100 120 °C 160 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 110 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.38 A -0.32 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 32 Ptot = 1W lj k i Ω ha VGS [V] -2.0 b c -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 a b c d e f ID -0.28 -0.24 -0.20 -0.16 -0.12 e g RDS (on) 24 d e f g h 20 16 fi j k l 12 8 4 VGS [V] = g i a b c d e f -2.5 -2.0 -3.5 -4.0 -4.5 -5.0 -6.0 -3.0 g h i j -7.0 -8.0 -9.0 -10.0 -0.08 c d h j -0.04 0.00 0.0 a b -1.0 -2.0 -3.0 -4.0 -5.0 V -6.5 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.34 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max -0.9 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.16 S ID -0.7 -0.6 gfs 0.12 0.10 -0.5 0.08 -0.4 0.06 -0.3 -0.2 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.04 0.02 0.00 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 VGS A ID -0.8 Semiconductor Group 6 12/05/1997 BSS 110 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = -0.17 A, VGS = -10 V 24 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 Ω 20 RDS (on) 18 16 14 12 10 8 VGS(th) -3.6 -3.2 -2.8 98% -2.4 98% -2.0 -1.6 typ typ 6 4 2 0 -60 -20 20 60 100 °C 160 -1.2 2% -0.8 -0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -10 0 pF C 10 2 A IF -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 12/05/1997