BSS 131
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 131 Type BSS 131 BSS 131
Pin 2 S Marking SRs
Pin 3 D
VDS
240 V
ID
0.1 A
RDS(on)
16 Ω
Package SOT-23
Ordering Code Q62702-S565 Q67000-S229
Tape and Reel Information E6327 E6433
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
± 14 ± 20 A 0.1
TA = 26 °C
DC drain current, pulsed
IDpuls
0.4
TA = 25 °C
Power dissipation
Ptot
0.36
W
TA = 25 °C
Semiconductor Group
1
Sep-13-1996
BSS 131
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Symbol
Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56
Unit °C K/W
Tj Tstg RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
240 1.4 0.1 2 1 12 15 2 1 60 30 10
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 16 26
VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.1 A VGS = 4.5 V, ID = 0.1 A
Semiconductor Group
2
Sep-13-1996
BSS 131
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.06 0.14 60 8 3.5 -
S pF 80 12 5 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.1 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Ω
Rise time
tr
8 12
VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Ω
Turn-off delay time
td(off)
12 16
VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Ω
Fall time
tf
15 20
VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Ω
Semiconductor Group
3
Sep-13-1996
BSS 131
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.8 0.1 0.4 V 1.2 Values typ. max. Unit
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.2 A, Tj = 25 °C
Semiconductor Group
4
Sep-13-1996
BSS 131
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.11 A
0.40 W
Ptot
0.32 0.28 0.24
ID
0.09 0.08 0.07 0.06
0.20 0.05 0.16 0.04 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
285 V 275
V(BR)DSS 70 2
265 260 255 250 245 240 235 230 225 220 215 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
Sep-13-1996
BSS 131
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.24 A 0.20
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
50
Ptot = 0W
l k jihf e g
d
VGS [V]
a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 b c
Ω
RDS (on) 40
35 30 25 20 15
a
b
ID
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8
a c
d e f g h i j
c ed f h
bk
l
j ki g
10 5 0 V 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18
VGS [V] =
a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs,
0.32
0.24 S
A 0.20
ID
0.24
gfs
0.18 0.16 0.20 0.14 0.16 0.12 0.10 0.12 0.08 0.08 0.06 0.04 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A ID 0.30
VGS
Semiconductor Group
6
Sep-13-1996
BSS 131
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.1 A, VGS = 10 V
40
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
32 28 24 20 16 12
VGS(th)
3.6 3.2 2.8
98%
2.4
98%
2.0
typ
1.6 1.2
typ
8 4 0 -60 -20 20 60 100 °C 160
2%
0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 0
pF C 10 2
A
IF
10 -1
Ciss
10 1
10 -2
Coss Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 0 0
5
10
15
20
25
30
V VDS
40
10 -3 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
Sep-13-1996
BSS 131
Package outlines SOT-23 Dimensions in mm
Semiconductor Group
8
Sep-13-1996
