BSS169

BSS 169 Preliminary data SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 G Type BSS 169 Pin 2 S Pin 3 D VDS 100 V ID 0.12 A RDS(on) 12 Ω Package SOT-23 Ordering Code Q67050-T7 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage, aperiodic Continuous drain current ± 14 ± 20 A 0.12 TA = 25 °C DC drain current, pulsed IDpuls 0.36 TA = 25 °C Power dissipation Ptot 0.36 W -55 ... + 150 °C -55 ... + 150 ≤ 350 ≤ 285 TA = 25 °C Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate - reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJSR K/W E 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 May-30-1996 BSS 169 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V (BR)DSV V 100 -2.5 200 10 6 -1.5 µA 1 mA 70 nA 100 Ω 12 VGS = -10 V, ID = 250 µA Gate threshold voltage VGS(th) -3 VDS = 3 V, ID = 10 µA Drain-source cutoff current IDSV VDS = 100 V, VGS = -10 V, Tj = 25 °C VDS = 100 V, VGS = -10 V, Tj = 125 °C On-state drain current ID(on) IGSS RDS(on) VGS = 0 V, VDS = 10 V Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 0 V, ID = 0.05 A Semiconductor Group 2 May-30-1996 BSS 169 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.1 0.15 70 11 4 - S pF 100 20 7 ns 7 11 VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance Ciss Coss - VGS = -4.5 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = -4.5 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = -4.5 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω Rise time tr 10 15 VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω Turn-off delay time td(off) 13 17 VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω Fall time tf 13 17 VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω Semiconductor Group 3 May-30-1996 BSS 169 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 0.8 0.12 0.36 V 1.3 Values typ. max. Unit ISM VSD TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 0.3 A Semiconductor Group 4 May-30-1996