BSS 296
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 296 Type BSS 296
Pin 2 D Marking SS 296
Pin 3 S
VDS
100 V
ID
0.8 A
RDS(on)
0.8 Ω
Package TO-92
Ordering Code Q62702-S217
Tape and Reel Information E6296
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.8
TA = 25 °C
DC drain current, pulsed
IDpuls
3.2
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 296
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 1.4 0.1 8 10 0.5 0.6 2 1 50 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 0.8 1.4
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.8 A VGS = 4.5 V, ID = 0.8 A
Semiconductor Group
2
12/05/1997
BSS 296
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.5 1.2 300 60 30 -
S pF 400 90 45 ns 8 12
VDS≥ 2 * ID * RDS(on)max, ID = 0.8 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω
Rise time
tr
15 25
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω
Turn-off delay time
td(off)
120 160
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω
Fall time
tf
65 85
VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω
Semiconductor Group
3
12/05/1997
BSS 296
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.9 0.8 3.2 V 1.3 Values typ. max. Unit
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 1.6 A
Semiconductor Group
4
12/05/1997
BSS 296
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.9 A
1.2 W 1.0
Ptot
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 °C 160
ID
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
120 V 116 1 V(BR)DSS 14 112 110 108 106 104 102 100 98 96 94 92 90 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
12/05/1997
BSS 296
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
1.8 A
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
2.6
Ptot = l1W k g
h jif e d
VGS [V] a 2.0
Ω
2.2
a
b
c
ID
1.4
c
RDS (on)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4
VGS [V] =
a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0
b c
2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
1.2 1.0 0.8 0.6 0.4 0.2
a
d e f g h
bi
j k l
d e i jg lf h k
0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
A
1.5
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max
4.5 A
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
2.0 S
ID
3.5 3.0
gfs
1.6 1.4 1.2
2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.4 0.2 0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS
A ID
4.0
Semiconductor Group
6
12/05/1997
BSS 296
Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.8 A, VGS = 10 V
2.0
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60
VGS(th)
3.6 3.2 2.8
98%
2.4
98%
2.0
typ
1.6 1.2
typ
2%
0.8 0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs
10 1
pF C 10 2
Ciss
A
IF
10 0
Coss Crss
10 1 10 - 1
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 0 0 10 -2 0.0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
12/05/1997