BSS87

BSS 87 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSS 87 Type BSS 87 VDS 240 V ID 0.29 A RDS(on) 6Ω Package SOT-89 Marking KA Ordering Code Q67000-S506 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.29 TA = 23 °C DC drain current, pulsed IDpuls 1.16 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 Sep-18-1996 BSS 87 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 1 3 4 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 0.2 µA VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS 10 nA Ω 6 10 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.29 A VGS = 4.5 V, ID = 0.29 A Semiconductor Group 2 Sep-18-1996 BSS 87 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.14 0.33 115 15 8 - S pF 155 25 12 ns 6 9 VDS≥ 2 * ID * RDS(on)max, ID = 0.29 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Turn-off delay time td(off) 33 45 VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Fall time tf 22 30 VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Semiconductor Group 3 Sep-18-1996 BSS 87 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.85 0.29 1.16 V 1.4 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.58 A, Tj = 25 °C Semiconductor Group 4 Sep-18-1996 BSS 87 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.30 A 0.26 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 °C 160 ID 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 285 V 275 V(BR)DSS 70 2 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 Sep-18-1996 BSS 87 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.65 A 0.55 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 19 Ptot = 1W lk h ji g f VGS [V] Ω 16 a b c d 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 a b c d ID 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 1.0 2.0 3.0 4.0 5.0 e RDS (on) 14 12 10 8 6 e e f g dh i j c k l 4 b a f gh i j k 2 0 V 7.0 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 1.2 0.55 S A ID 0.8 gfs 0.45 0.40 0.35 0.30 0.6 0.25 0.20 0.15 0.2 0.10 0.05 0.0 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.10 0.20 0.30 0.40 A ID 0.55 0.4 VGS Semiconductor Group 6 Sep-18-1996 BSS 87 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.29 A, VGS = 10 V 24 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 20 RDS (on) 18 16 14 12 10 VGS(th) 3.6 3.2 2.8 2.4 98% 2.0 98% 8 6 1.6 1.2 typ typ 4 2 0 -60 -20 20 60 100 °C 160 0.8 0.4 0.0 -60 -20 20 2% 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 pF C 10 2 A IF Ciss 10 0 10 1 Coss Crss 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-18-1996 BSS 87 Package outlines SOT-89 Dimensions in mm Semiconductor Group 8 Sep-18-1996