BSS88

BSS 88 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 88 Type BSS 88 BSS 88 BSS 88 Pin 2 D Marking SS88 Pin 3 S VDS 240 V ID 0.25 A RDS(on) 8Ω Package TO-92 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.25 TA = 25 °C DC drain current, pulsed IDpuls 1 TA = 25 °C Power dissipation Ptot 1 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 88 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 0.8 0.1 10 10 5 7 1.2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.6 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 8 15 VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 100 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 0.25 A VGS = 1.8 V, ID = 14 mA Semiconductor Group 2 12/05/1997 BSS 88 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.14 0.31 80 15 8 - S pF 110 25 12 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.25 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Turn-off delay time td(off) 30 40 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Fall time tf 25 35 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 88 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.9 0.25 1 V 1.3 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.5 A Semiconductor Group 4 12/05/1997 BSS 88 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 4 V 0.26 A 0.22 1.2 W 1.0 Ptot 0.9 0.8 0.7 ID 0.20 0.18 0.16 0.14 0.6 0.12 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 °C 160 0.10 0.08 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 285 V 275 V(BR)DSS 70 2 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 88 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.60 A 0.50 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 26 Ptot = 1W l jig khf e d Ω VGS [V] a 1.5 b c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 10.0 a b c 22 ID 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 4 5 6 7 a b c RDS (on) 20 18 16 14 12 10 8 6 4 2 VGS [V] = a 1.5 b 2.0 c 2.5 d 3.0 e f 3.5 4.0 g 4.5 h i 5.0 6.0 j 7.0 k l 8.0 10.0 d e f g h i j k l d e f hi jlg k V 9 0 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.40 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 1.3 A 1.1 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.55 S ID 1.0 0.9 0.8 0.7 0.6 0.5 0.4 gfs 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.10 0.05 0.00 0.0 0.2 0.4 0.6 0.8 A ID 1.1 VGS Semiconductor Group 6 12/05/1997 BSS 88 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.25 A, VGS = 4.5 V 20 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 2.6 V 2.2 Ω RDS (on) 16 14 12 10 8 6 4 2 0 -60 VGS(th) 2.0 1.8 1.6 98% 1.4 1.2 1.0 98% typ 0.8 0.6 0.4 0.2 typ 2% -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 1 pF C 10 2 A IF Ciss 10 0 10 1 Coss Crss 10 - 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997