BTS117

HITFET® BTS 117 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 mΩ 1000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation Current lim itation Overvoltage protection 1 IN ESD Overload protection Overtemperature protection Short circuit Short circuit protection protection Source 3 HIT F ET ® Semiconductor Group Page 1 13.07.1998 BTS 117 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V Symbol Value 60 32 mA no limit | IIN | ≤ 2 Unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS - 40 ... +150 - 55 ... +150 50 1000 3000 °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 3.5 A Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD 75 70 E 40/150/56 V VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω , ID=0,5*3.5A td = 400 ms, RI = 2 Ω , ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) R thJC R thJA R thJA 2.5 75 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical 2 without blown air. Semiconductor Group Page 2 13.07.1998 BTS 117 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 30 120 2200 max. 73 5 2.2 60 300 4000 V µA V µA Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 800 Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 0.7 mA Input current - normal operation, ID 2 mA @ VIN >10V. t0 : tm : t1 : Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. t2 : Semiconductor Group Page 5 13.07.1998 BTS 117 Maximum allowable power dissipation Ptot = f(Tc ) BTS 117 On-state resistance RON = f(Tj); ID=3.5A; VIN =10V 50 W 200 Ω 150 RDS(on) 40 Ptot 35 30 25 20 15 max. 125 100 typ. 75 50 10 25 5 0 0 0 -50 -25 0 25 50 75 100 °C 20 40 60 80 100 120 °C 150 150 150 Tj On-state resistance RON = f(Tj); ID= 3.5A; VIN=5V 250 Typ. input threshold voltage VIN(th) = f(Tj ); ID =0.7A; VDS=12V 2.0 V Ω 200 1.6 RDS(on) 175 150 max. VIN(th) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 125 100 75 50 25 0 -50 typ. -25 0 25 50 75 100 °C 150 -25 0 25 50 75 100 °C 150 Tj Tj Page 6 Semiconductor Group 13.07.1998 BTS 117 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj=25°C 10 Typ. output characteristic ID = f(VDS); Tj=25°C Parameter: VIN 10 10V 6V 5V A A ID 6 ID 6 4V 4 4 Vin=3V 2 2 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 4 V 6 VIN VDS Transient thermal impedance Z thJC = f(tP) Parameter: D=tP/T 10 1 K/W RthJC 10 0 D=0.5 0.2 0.1 0.05 10 -1 0.02 0.01 0.005 0 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Semiconductor Group Page 7 13.07.1998 BTS 117 Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb µC V IN HITFET ∆V V IN thermal shutdown ∆V = RST *IIN(3) Semiconductor Group Page 8 13.07.1998 BTS 117 Package and ordering code all dimensions in mm Ordering code: Q67060-S6500-A3 Ordering Code: Q67060-S6500-A2 Semiconductor Group Page 9 13.07.1998 BTS 117 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group Page 10 13.07.1998