BTS428L2

PROFET® BTS428L2 Smart High-Side Power Switch One Channel: 60mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation RON Vbb(on) IL(NOM) IL(SCr) 60mΩ 4.75...41V 7.0A 17A Package TO 252-5-1 (D-Pak less than half the size of a TO-220 SMD) 1 General Description • • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and ® diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions Applications • • • • µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions • • • • • • • Very low standby current CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage W ide operating voltage range Logic ground independent from load ground Protection Functions • • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD) Block Diagram Vbb IN ST Logic with protection functions OUT Diagnostic Function • • • Diagnostic feedback with open drain output Open load detection in ON-state Feedback of thermal shutdown in ON-state PROFET GND Load Semiconductor Group Page 1 of 12 1999-Feb-26 BTS428L2 Functional diagram overvoltage protection internal voltage supply logic gate control + charge pump current limit VBB clamp for inductive load OUT IN ESD ST GND temperature sensor LOAD Open load detection PROFET Pin Definitions and Functions Pin 1 2 3 4 5 Tab Symbol GND IN Vbb ST OUT Vbb Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage The tab is shorted to pin 3 Diagnostic feedback, low on failure Output to the load Positive power supply voltage The tab is shorted to pin 3 Pin configuration (top view) Tab = VBB 1 2 (3) 4 5 GND IN ST OUT Semiconductor Group Page 2 1999-Feb-26 BTS428L2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 Ω, RL= 4.0 Ω, td= 400 ms, IN= low or high Load current (Current limit, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL(ISO) = 7 A, RL = 0 Ω; E4)AS=0.19J: (See diagram on page 8) Symbol Vbb Vbb Values 43 24 60 self-limited -40 ...+150 -55 ...+150 75 5.6 1.0 4.0 8.0 -10 ... +16 ±2.0 ±5.0 Unit V V V A °C W mH kV VLoad dump3) IL Tj Tstg Ptot ZL VESD Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 VIN IIN IST V mA Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA device on pcb5): Values typ max -- 1.67 -75 42 -Unit K/W 1) 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended). RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 EAS is the maximum inductive switch-off energy Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 3 1999-Feb-26 BTS428L2 Electrical Characteristics Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A; VBB ≥ 7V see diagram, page 9 Tj=25 °C: RON Tj=150 °C: IL(ISO) IL(GNDhigh) -- 50 100 7.0 -100 100 --- 60 120 -2 200 200 1 1 mΩ Nominal load current, (pin 3 to 5) ISO 10483-1, 6.7:VON=0.5V, TC=85°C 5.8 -30 30 0.1 0.1 A mA µs Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 (not tested specified by design) Turn-on time IN Turn-off time IN RL = 12 Ω, Slew rate on 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω, Operating Parameters Operating voltage to 90% VOUT: ton to 10% VOUT: toff dV /dton -dV/dtoff V/µs V/µs Tj =-40 Tj =+25...+150°C: Overvoltage protection6) Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) 7) Tj=-40...+25°C: VIN=0; see diagram on page 9 Tj= 150°C: Off-State output current (included in Ibb(off)) VIN=0 Operating current 8), VIN=5 V Vbb(on) Vbb(AZ) Ibb(off) IL(off) IGND 4.75 41 43 ----- ---47 5 -1 0.8 41 43 -52 9 25 10 1.5 V V µA µA mA 6) 7 8) ) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and circuit diagram page 7. Measured with load Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 4 1999-Feb-26 BTS428L2 Parameter and Conditions at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Current limit (pin 3 to 5) (see timing diagrams on page 11) IL(lim) 21 17 12 --41 43 150 ---28 22 16 17 7.5 36 31 24 --A Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 11) Thermal shutdown time9 Tj,start = 25°C: toff(SC) (see timing diagrams on page 11) A ms Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) 11 Reverse battery voltage drop (Vout > Vbb) ) IL = -2 A Tj=150 °C: Diagnostic Characteristics Open load detection current (on-condition) VON(CL) Tjt ∆Tjt -Vbb -VON(rev) 47 -10 -600 52 --32 -- V °C K V mV IL (OL) 10 -- 500 mA Input and Status Feedback12) Input resistance see circuit page 7 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Delay time for status with open load after switch off (see timing diagrams on page 11) RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) IIN(on) td(ST OL4) 2.5 1.7 1.5 -1 20 100 3.5 --0.5 -50 520 6 3.2 --50 90 900 kΩ V V V µA µA µs Status output (open drain) Zener limit voltage ST low voltage IST = +1.6 mA: VST(high) IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7). 11) Specified by design, not tested 12) If a ground resistor RGND is used, add the voltage drop across this resistor. 9) Semiconductor Group Page 5 1999-Feb-26 BTS428L2 Truth Table Input Normal operation Open load Overtemperature L = "Low" Level H = "High" Level level L H L H L H Output level L H Z H L L Status BTS 428L2 H H H L H L X = don’t care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) Semiconductor Group Page 6 1999-Feb-26 BTS428L2 Terms Ibb I IN 2 I ST V V bb R IN V ST 4 ST GND 1 GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Overvolt. and reverse batt. protection + 5V + Vbb R ST IN V RI Logic Z2 R ST ST V Z1 OUT PROFET GND R Load R GND Signal GND Load GND Input circuit (ESD protection) R IN I VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 3.5 kΩ typ. Open-load detection in on-state Open load, if VON < RON·IL(OL); IN high I GND I + V bb ESD-ZD I The use of ESD zener diodes as voltage clamp at DC conditions is not recommended ON VON Status output +5V OUT Logic unit Open load detection R ST(ON) ST GND ESDZD GND disconnect 3 IN Vbb PROFET OUT ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω at 1.6 mA. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. 2 5 Inductive and overvoltage output clamp + V bb 4 V bb V IN V ST ST GND 1 V GND V Z VON Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. OUT GND PROFET VON clamped to 47 V typ. Semiconductor Group Page 7 1999-Feb-26 BTS428L2 GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb IN ST V V OUT Inductive Load switch-off energy dissipation E bb E AS 2 5 IN Vbb PROFET OUT ELoad = GND ST GND ZL EL { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is 2 EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, 5 with an approximate solution for RL > 0 Ω: IL· L IL·RL EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V ) L OUT(CL)| bb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. ZL [mH] 1000 100 10 1 0.1 2 7 12 17 IL [A] Semiconductor Group Page 8 1999-Feb-26 BTS428L2 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mΩ] 175 150 125 100 75 50 25 0 3 5 7 9 30 40 Vbb [V] Tj=150°C 25°C -40°C Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low Ibb(off) [µA] 45 40 35 30 25 20 15 10 5 0 -50 0 50 100 150 200 Tj [°C] Semiconductor Group Page 9 1999-Feb-26 BTS428L2 Timing diagrams Figure 1a: Vbb turn on: IN Figure 2b: Switching a lamp, IN V bb ST V OUT V OUT ST open drain t I L t proper turn on under all conditions The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 30 A typ. of the device. Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 2c: Switching an inductive load IN IN VOUT 90% t on dV/dton 10% t dV/dtoff ST off V OUT IL I L t I L(OL) t *) if the time constant of load is too large, open-load-status may occur Semiconductor Group Page 10 1999-Feb-26 BTS428L2 Figure 3a: Short circuit shut down by overtemperature, reset by cooling IN other channel: normal operation Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN t d(ST OL) I t ST L d(ST OL) I L(lim) I L(SCr) VOUT t ST off(SC) I t normal L open normal t td(ST OL) = 10 µs typ. Heating up of the chip may require several milliseconds, depending on external conditions Figure 4a: Overtemperature: Reset if Tj