BTS774G

TrilithIC™ BTS 774 G Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ.165 mΩ, P-DSO-28-9 Low-side switch: typ. 45 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized power P-DSO-Package Full short-circuit-protection Operates up to 40 V Status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS compatible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Ordering Code Q67007-A9336 Package P-DSO-28-9 • • • • • • • • • • • • • Type BTS 774 G Description The BTS 774 G is a TrilithIC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. “Silicon instead of heatsink” becomes true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency. The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis. (The comparable standard high-side product is the BTS 611L1.) Semiconductor Group 1 1999-01-07 BTS 774 G For minimized RDS ON the two low-side switches are N channel vertical power FETs in the SIEMENS SMART SIPMOS® technology. Fully protected by embedded protection functions. (The comparable standard product is the BSP 78). Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors are connected to separate pins. So the BTS 774 G can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications. Semiconductor Group 2 1999-01-07 BTS 774 G DL1 GL1 DL1 N.C. DHVS GND GH1 ST GH2 1 2 3 4 5 6 7 HS-Lead Frame 8 9 LS-Lead Frame 1 28 DL1 27 SL1 26 SL1 25 DL1 24 DHVS 23 SH1 22 SH1 21 SH2 20 SH2 19 DHVS 18 DL2 LS-Lead Frame 2 17 SL2 DHVS 10 N.C. DL2 GL2 DL2 11 12 13 14 16 SL2 15 DL2 AEP02071 Figure 1 Pin Configuration (top view) Semiconductor Group 3 1999-01-07 BTS 774 G Pin Definitions and Functions Pin No. 1, 3, 25, 28 2 4 5, 10, 19, 24 6 7 8 9 11 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 1) Symbol DL1 GL1 N.C. DHVS GND GH1 ST GH2 N.C. DL2 GL2 SL2 SH2 SH1 SL1 Function Drain of low-side switch1 Leadframe 1 1) Gate of low-side switch1 not connected Drain of high-side switches and power supply voltage Leadframe 2 1) Ground Gate of high-side switch1 Status of high-side switches; open Drain output Gate of high-side switch2 not connected Drain of low-side switch2 Leadframe 3 1) Gate of low-side switch2 Source of low-side switch2 Source of high-side switch2 Source of high-side switch1 Source of low-side switch1 To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe. Bold type: Pin needs power wiring Semiconductor Group 4 1999-01-07 BTS 774 G DHVS 5, 10, 19, 24 ST 8 Diagnosis Biasing and Protection GH1 7 GH2 9 Driver IN OUT 00LL 01LH 10HL 11HH R O1 R O2 20, 21 SH2 12, 14, 15, 18 GND 6 Protection 22, 23 1, 3, 25, 28 DL2 SH1 DL1 GL1 2 Gate Driver Protection GL2 13 Gate Driver 26, 27 SL1 16, 17 SL2 AEB02676 Figure 2 Block Diagram Semiconductor Group 5 1999-01-07 BTS 774 G Circuit Description Input Circuit The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs GL1 and GL2 are connected to the internal gate-driving units of the fully protected N-channel vertical power-MOS-FETs. Output Stages The output stages consist of an ultra low RDS ON Power-MOS H-Bridge. Embedded protective circuits make the outputs short circuit proof to ground, to the supply voltage and load short circuit proof. Positive and negative voltage spikes, which occur when driving inductive loads, are limited by integrated power clamp diodes. Short Circuit Protection The outputs are protected against – output short circuit to ground – output short circuit to the supply voltage, and – overload (load short circuit). An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-VoltageDrop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of overloaded high-side switches the status output is set to low. If the HS-Switches are in OFF-state-Condition internal resistors RO1,2 from SH1,2 to GND pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output examiner circuit compares the output voltages with the internal reference voltage VEO. This results in switching the status output to low. The fully protected low-side switches have no status output. Overtemperature Protection The highside and the lowside switch also incorporates an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. Undervoltage-Lockout (UVLO) When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The High-Side output transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF. Semiconductor Group 6 1999-01-07 BTS 774 G Overvoltage-Lockout (OVLO) When VS reaches the switch-off voltage VOVOFF the High-Side output transistors are switched off with a hysteresis. The IC becomes active if the supply voltage VS drops below the switch-on value VOVON. Open Load Detection Open load is detected by current measurement. If the output current drops below an internal fixed level the error flag is set with a delay. Status Flag Various errors as listed in the table “Diagnosis” are detected by switching the open drain output ST to low. Semiconductor Group 7 1999-01-07 BTS 774 G Truthtable and Diagnosis (valid only for the High-Side-Switches) Flag GH1 0 0 1 1 0 0 1 0 1 X 0 0 1 0 1 X 0 1 X X 0 X 1 X GH2 0 1 0 1 0 1 X 0 0 1 0 1 X 0 0 1 X X 0 1 0 1 X X SH1 L L H H Z Z H L H X H H H L H X L L X X L L L L SH2 L H L H L H X Z Z H L H X H H H X X L L L L L L ST Remarks 1 1 1 1 1 1 0 1 1 0 0 1 1 0 1 1 1 0 1 0 1 0 0 1 stand-by mode switch2 active switch1 active both switches active Inputs Normal operation; identical with functional truth table Outputs Open load at high-side switch1 detected Open load at high-side switch2 detected detected Short circuit to DHVS at high-side switch1 Short circuit to DHVS at high-side switch2 detected Overtemperature high-side switch1 Overtemperature high-side switch2 Overtemperature both high-side switch detected detected detected detected not detected Over- and Under-Voltage Inputs: 0 = Logic LOW 1 = Logic HIGH X = don’t care Outputs: Z = Output in tristate condition L = Output in sink condition H = Output in source condition X = Voltage level undefined Status: 1 = No error 0 = Error Semiconductor Group 8 1999-01-07 BTS 774 G Electrical Characteristics Absolute Maximum Ratings – 40 °C < Tj < 150 °C Parameter Symbol Limit Values min. max. Unit Remarks High-Side-Switches (Pins DHVS, GH1,2 and SH1,2) Supply voltage HS-drain current HS-input current HS-input voltage Status Output ST Status Output current VS IDHS IGH VGH – 0.3 –8 –2 – 10 43 * 2 16 V A mA V – * internally limited Pin GH1 and GH2 Pin GH1 and GH2 IST –5 5 mA Pin ST Low-Side-Switches (Pins DL1,2, GL1,2 and SL1,2) Break-down voltage LS-drain current LS-input voltage Temperatures Junction temperature Storage temperature V(BR)DSS IDLS VGL 40 16 – 0.3 * 10 V A V VGS = 0 V; ID VS > 18 V unless otherwise specified Parameter Symbol Limit Values min. Current Consumption Quiescent current typ. max. Unit Test Condition IS – 16 30 µA GH1 = GH2 = L VS = 13.2 V Tj = 25 °C Quiescent current Supply current Supply current IS IS IS – – – – 2 4 35 3.5 7 µA mA mA GH1 = GH2 = L VS = 13.2 V GH1 or GH2 = H GH1 and GH2 = H Under Voltage Lockout (UVLO) VUVON Switch-OFF voltage VUVOFF Switch ON/OFF hysteresis VUVHY Switch-ON voltage Over Voltage Lockout (OVLO) – 3.5 – 5.4 4.2 1.2 7 – – V V V VS increasing VS decreasing VUVON – VUVOFF VOVOFF Switch-ON voltage VOVON Switch OFF/ON hysteresis VOVHY Switch-OFF voltage 36 35 – 37.8 37.3 0.7 43 – – V V V VS increasing VS decreasing VOVOFF – VOVON Short Circuit of Highside Switch to GND Initial peak SC current Initial peak SC current Initial peak SC current ISCP ISCP ISCP 8 6.5 3.9 10 8.5 5 13 11 7 A A A Tj = – 40 °C Tj = 25 °C Tj = 150 °C Semiconductor Group 11 1999-01-07 BTS 774 G Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V unless otherwise specified Parameter Symbol Limit Values min. Short Circuit of Highside Switch to VS OFF-state examiner-voltage Output pull-down-resistor typ. max. Unit Test Condition VEO RO 2 4 3 10 4 30 V kΩ VGH = 0 V – Open Circuit Detection of Highside Switch Detection current IOCD 10 90 200 mA – Switching Times of Highside Switch Switch-ON-time; to 90% VSH Switch-OFF-time; to 10% VSH tON tOFF – – 0.2 0.15 0.4 0.4 ms ms resistive load ISH = 1 A; VS = 12 V resistive load ISH = 1 A; VS = 12 V Note: switching times are guaranteed by design Control Inputs of Highside Switches GH 1, 2 H-input voltage L-input voltage Input voltage hysterese H-input current L-input current Input series resistance Zener limit voltage VGHH VGHL VGHHY IGHH IGHL RI VGHZ – 1.5 – 20 1 2.5 5.4 2.8 2.3 0.5 60 25 3.5 – 3.5 – – 90 50 6 – V V V µA µA kΩ V – – – VGH = 5 V VGH = 0.4 V – IGH = 1.6 mA Semiconductor Group 12 1999-01-07 BTS 774 G Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V unless otherwise specified Parameter Symbol Limit Values min. Control Inputs GL1, 2 Gate-threshold-voltage Input current Input current typ. max. Unit Test Condition VGL(th) IGLN IGLF 0.9 – – 1.7 10 150 2.2 30 300 V µA µA IDL = 2 mA VGL = 5 V; normal operation VGL = 5 V; failure mode Short Circuit of Lowside Switch to VS Initial peak SC current ISCP 18 15 10 26 21 14 34 27 18 A A A Tj = – 40 °C Tj = 25 °C Tj = 150 °C Switching Times of Lowside Switch Switch-ON-time; to 90% VSL Switch-OFF-time; to 10% VSL tON tOFF – – 100 50 200 200 µs µs resistive load ISH = 1 A; VS = 12 V resistive load ISH = 1 A; VS = 12 V Note: Switching times are guaranteed by design. Status Flag Output ST of Highside Switch Low output voltage Leakage current Zener-limit-voltage VSTL ISTLK VSTZ – – 5.4 0.2 – – 0.6 10 – V µA V IST = 1.6 mA VST = 5 V IST = 1.6 mA Semiconductor Group 13 1999-01-07 BTS 774 G Electrical Characteristics (cont’d) ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V > VS > 18 V unless otherwise specified Parameter Symbol Limit Values min. Thermal Shutdown Thermal shutdown junction TjSD temperature Thermal switch-on junction TjSO temperature Temperature hysteresis Output Stages Leakage current of highside switch ∆T 155 150 – – – 10 190 180 – °C °C °C – – ∆T = TjSD – TjSO typ. max. Unit Test Condition IHLK – – – – – – – 1.3 0.8 – 0.8 165 12 10 1.5 10 1.2 220 µA µA V mA V mΩ VGH = VSH = 0 V VGL = 0 V VDS = 13 V IFH = 3 A IFH = 3 A IFL = 3 A ISH = 1 A Tj = 25 °C ISL = 1 A; VGL = 5 V Tj = 25 °C RDS ON H + RDS ON L ISH = 1 A; Leakage current of lowside ILKL switch Clamp-diode of highside switch; forward-Voltage Clamp-diode leakagecurrent of highside switch Clamp-diode of lowside switch; forward-voltage Static drain-source on-resistance of highside switch Static drain-source on-resistance of lowside switch Static path on-resistance VFH ILKCL VFL RDS ON H RDS ON L – 45 60 mΩ RDS ON – – 500 mΩ Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Semiconductor Group 14 1999-01-07 BTS 774 G ΙS Ι FH1, 2 ST 8 Diagnosis Driver IN OUT 00LL 01LH 10HL 11HH DHVS 5, 10, 19, 24 Biasing and Protection VS = 12 V CS 470 nF CL 100 µF VDSH2 - VFL2 VDSH1 - VFL1 VST VSTL VSTZ VGH1 VGH2 GH1 7 R O1 R O2 GH2 9 20 SH2 Ι SH2 21 GND 6 Ι GND Ι LKCL1, 2 Protection GL1 2 Gate Driver Protection 12, 14, 15, 18 DL2 Ι DL2 Ι LKL 22, 23 SH1 Ι SH1 1, 3, DL1 Ι DL1 25, 28 Ι LKL VUVON VUVOFF VOVON VOVOFF VGL1 VGL(th)1 GL2 13 VGL2 VGL(th)2 Gate Driver 26, 27 SL1 Ι SL1 16, 17 SL2 Ι SL2 VEO1 VDSL1 - VFL1 VEO2 VDSL2 - VFL2 AES02677 Figure 3 Test Circuit Named during Open Circuit Named during Leakage-Cond. HS-Source-Current Named during Short Circuit ISH1,2 ISCP IOCD IHSLK Semiconductor Group 15 1999-01-07 BTS 774 G Watchdog Reset Q TLE 4278G D I DO1 1N4001 GND DO1 Z39 DHVS 5, 10, 19, 24 VS = 12 V CS 10 µF RQ 100 k Ω WD R VCC CQ 22 µF CD 47 nF RS 10 k Ω ST 8 Diagnosis Driver IN OUT 00LL 01LH 10HL 11HH Biasing and Protection GH1 7 R O1 R O2 GH2 9 20 SH2 21 M µP GND 6 12, 14, 15, 18 DL2 22, 23 SH1 1, 3, DL1 25, 28 Protection GL1 2 Gate Driver Protection GL2 13 Gate Driver 26, 27 SL1 16, 17 SL2 GND AES02678 Figure 4 Application Circuit Semiconductor Group 16 1999-01-07 BTS 774 G Package Outlines P-DSO-28-9 (Plastic Dual Small Outline Package) 2.65 max 0.35 x 45˚ 2.45 -0.2 0.2 -0.1 1.27 0.35 +0.15 2) 0.2 28x 28 15 0.1 0.4 +0.8 10.3 ±0.3 1 Index Marking 18.1 -0.4 1) 14 1) Does not include plastic or metal protrusions of 0.15 max rer side 2) Does not include dambar protrusion of 0.05 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 17 0.23 +0.0 9 8˚ ma x GPS05123 7.6 -0.2 1) Dimensions in mm 1999-01-07