BUP314

BUP 314 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 314 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4206-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 52A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 52 33 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 104 66 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 65 mJ IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-30-1996 BUP 314 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, Tj = 25 °C VGE = 15 V, IC = 42 A, Tj = 125 °C Zero gate voltage collector current ICES 0.25 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 8.5 20 1650 250 110 - S pF 2200 380 160 VCE = 20 V, IC = 25 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 BUP 314 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 75 110 ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Rise time tr 65 100 VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω Turn-off delay time td(off) 420 560 VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Fall time tf 45 60 VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω Semiconductor Group 3 Jul-30-1996 BUP 314 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 320 Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 55 A W Ptot 240 IC 45 40 35 30 200 160 25 120 20 15 10 40 5 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 80 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT A K/W IC 10 2 tp = 2.0µs 10 µs ZthJC 10 - 1 100 µs 10 1 D = 0.50 1 ms 0.20 10 - 2 10 0 10 ms 0.10 0.05 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-30-1996 BUP 314 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 50 A IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 50 A 17V 15V 13V 11V 9V 7V IC 40 35 30 25 20 15 10 5 0 0 IC 40 35 30 25 20 15 10 5 0 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 50 A IC 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-30-1996 BUP 314 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 10 3 t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A 10 3 tdoff t tdoff ns t ns tdon 10 2 tdon tr 10 2 tr tf tf 10 1 0 10 20 30 40 A 60 10 1 0 20 40 60 80 100 120 140 IC RG Ω 180 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 10 mWs E 8 7 6 5 4 3 2 1 0 0 Eoff Eon E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 25 A 10 mWs E 8 7 6 5 4 3 2 1 Eoff Eon 10 20 30 40 A 60 IC 0 0 20 40 60 80 100 120 140 RG Ω 180 Semiconductor Group 6 Jul-30-1996 BUP 314 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 25 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 C Ciss 600 V 800 V 10 0 Coss 8 10 - 1 6 4 2 0 0 10 -2 0 Crss 20 40 60 80 100 120 140 170 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 7 Jul-30-1996 BUP 314 Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-30-1996