BUP 400D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 400D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4423-A2 Pin 3 E
VCE
600V
IC
22A
Package TO-220 AB
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 22 14
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
44 28
TC = 25 °C TC = 90 °C
Diode forward current
IF
11
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
72
TC = 25 °C
Power dissipation
Ptot
100
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Jul-31-1996
BUP 400D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
≤ 1.25 ≤ 2.5
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C
Zero gate voltage collector current
ICES
160
µA nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
2 570 80 50 -
S pF 760 120 75
VCE = 20 V, IC = 10 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Jul-31-1996
BUP 400D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit
td(on)
45 70
ns
VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Ω
Rise time
tr
60 90
VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Ω
Turn-off delay time
td(off)
250 340
VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Ω
Fall time
tf
500 680
VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Ω
Free-Wheel Diode Diode forward voltage
VF
1.65 -
V
IF = 10 A, VGE = 0 V, Tj = 25 °C IF = 10 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
trr
ns
IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/µs Tj = 25 °C Tj = 125 °C
Reverse recovery charge 60 100 100 150 µC
Qrr
IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/µs Tj = 25 °C Tj = 125 °C
0.2 0.4 0.37 0.74
Semiconductor Group
3
Jul-31-1996
BUP 400D
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
110 W
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
22 A
Ptot
90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 160
IC
18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
tp = 5.1µs
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
IGBT
K/W
A
IC
10 1
10 µs
ZthJC
10 0
100 µs
10 - 1 D = 0.50 0.20
10 0
1 ms
single pulse 10 - 2
0.10 0.05 0.02
10 ms
0.01
DC 10 -1 0 10 10
1
10
2
V 10
3
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Jul-31-1996
BUP 400D
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
20 A
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
20 A 17V 15V 13V 11V 9V 7V
IC
16 14 12 10 8 6 4 2 0 0
IC
16 14 12 10 8 6 4 2 0 0
17V 15V 13V 11V 9V 7V
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V
20 A
IC
16 14 12 10 8 6 4 2 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Jul-31-1996
BUP 400D
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
10 3 tf
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 10 A
10 3 tdoff tf t ns
t
ns tdoff
tr 10 2 tr 10
2
tdon tdon
10 1 0
5
10
15
A
25
10 1 0
50
100
150
200
250
300
Ω
400
IC
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
2.0 mWs E 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 A 25
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 10 A
2.0 mWs E 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Eoff Eon
Eoff Eon
IC
0
50
100
150
200
250
300
Ω
400
RG
Semiconductor Group
6
Jul-31-1996
BUP 400D
Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 10 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
100 V
300 V
10 0 Ciss
10 - 1 6 4 2 0 0 10 -2 0 Coss Crss
10
20
30
40
nC
55
5
10
15
20
25
30
QGate
V 40 VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
10
ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
4
1.0
2
0.5
0 0 100 200 300 400 500 600 V 800 VCE
0.0 0 100 200 300 400 500 600 V 800 VCE
Semiconductor Group
7
Jul-31-1996
BUP 400D
Typ. forward characteristics
IF = f (VF)
parameter: Tj
16
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
Diode
A
K/W
IF
12
ZthJC
10 0
10
Tj=125°C
Tj=25°C
8
D = 0.50 0.20
6
10
-1
0.10 0.05
4 single pulse 2 0 0.0 10 -2 -5 10
0.02 0.01
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Jul-31-1996
BUP 400D
Package Outlines Dimensions in mm Weight:
Semiconductor Group
9
Jul-31-1996