BUP602D

BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 602D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4229-A2 Pin 3 E VCE 600V IC 36A Package TO-218 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 36 22 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 72 40 TC = 25 °C TC = 90 °C Diode forward current IF 31 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 180 TC = 25 °C Power dissipation Ptot 150 W - 55 ... + 150 - 55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-31-1996 BUP 602D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.83 ≤ 1.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.5 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C VGE = 15 V, IC = 40 A, Tj = 25 °C VGE = 15 V, IC = 40 A, Tj = 125 °C Zero gate voltage collector current ICES 200 µA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 4 1040 115 66 - S pF 1400 175 110 VCE = 20 V, IC = 20 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BUP 602D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 40 60 ns VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Ω Rise time tr 70 110 VCC = 300 V, VGE = 15 V, IC = 20 A RGon = 47 Ω Turn-off delay time td(off) 250 330 VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Ω Fall time tf 500 680 VCC = 300 V, VGE = -15 V, IC = 20 A RGoff = 47 Ω Free-Wheel Diode Diode forward voltage VF 1.8 1.6 - V IF = 20 A, VGE = 0 V, Tj = 25 °C IF = 20 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr 110 160 ns IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/µs, Tj = 125 °C Reverse recovery charge Qrr µC IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/µs Tj = 25 °C Tj = 125 °C 0.6 1.3 1.1 2.4 Semiconductor Group 3 Jul-31-1996 BUP 602D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 160 Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 36 A W Ptot 120 IC 28 24 100 20 80 16 60 12 40 8 4 0 0 20 0 0 20 40 60 80 100 120 °C 160 20 40 60 80 100 120 °C 160 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 tp = 17.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT A K/W IC 100 µs ZthJC 10 1 10 - 1 1 ms D = 0.50 0.20 10 0 10 ms 10 - 2 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 0 10 10 -3 -5 10 10 1 10 2 V 10 3 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-31-1996 BUP 602D Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 40 IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 40 A IC 30 17V 15V 13V 11V 9V 7V A IC 30 17V 15V 13V 11V 9V 7V 25 25 20 20 15 15 10 10 5 0 0 5 0 0 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 40 A IC 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-31-1996 BUP 602D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 47 Ω 10 3 t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, IC = 20 A 10 3 tf t t ns tdoff tr 10 2 ns tf tdoff 10 2 tr tdon tdon 10 1 0 5 10 15 20 25 30 35 40 A IC 50 10 1 0 20 40 60 80 Ω 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 47 Ω 3.0 Eoff mWs E E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 20 A 3.0 mWs E 2.0 Eon 2.0 Eoff 1.5 1.5 1.0 1.0 Eon 0.5 0.5 0.0 0 5 10 15 20 25 30 35 40 A 50 0.0 IC 0 20 40 60 80 Ω 120 RG Semiconductor Group 6 Jul-31-1996 BUP 602D Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 20 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 - 1 6 Coss Crss 4 2 0 0 10 -2 0 10 20 30 40 50 60 70 nC 90 5 10 15 20 25 30 QGate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 7 Jul-31-1996 BUP 602D Typ. forward characteristics IF = f (VF) parameter: Tj 40 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W Diode A IF 30 ZthJC 10 0 25 Tj=125°C Tj=25°C 10 - 1 20 10 15 -2 D = 0.50 0.20 0.10 0.05 10 10 - 3 single pulse 0.02 0.01 5 0 0.0 10 -4 -5 10 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Jul-31-1996 BUP 602D Package Outlines Dimensions in mm Weight: Semiconductor Group 9 Jul-31-1996