BUZ10

BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C Gate source voltage Power dissipation 8 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 10 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.05 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.07 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 14 A Semiconductor Group 2 07/96 BUZ 10 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 7 13 650 300 110 - S pF 820 450 170 ns 20 35 VDS≥ 2 * ID * RDS(on)max, ID = 14 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 40 65 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 80 110 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 60 75 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 10 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 46 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 10 Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 24 A 80 W 20 Ptot ID 60 18 16 50 14 12 10 40 30 8 6 4 20 10 0 0 2 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 2 t = 2.9µs p 10 µs ZthJC 10 0 /ID = ) on S( D R 1 ms VD S 100 µs 10 -1 D = 0.50 0.20 0.10 10 -2 0.05 0.02 single pulse 0.01 10 1 10 ms 10 0 0 10 DC 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 10 Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 55 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.22 Ptot = 75W l kj i ha b Ω VGS [V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e f g ID 45 40 g 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 VGS [V] = j k h i c d e 35 30 25 20 d e f f g h i j k l 15 10 5 0 0.0 a c b 0.02 V 6.5 0.00 0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 1.0 2.0 3.0 4.0 5.0 5 10 15 20 25 30 35 40 A 50 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 55 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 20 S ID 45 40 35 30 gfs 16 14 12 10 25 8 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V 10 6 4 2 0 0 5 10 15 20 25 30 35 40 A 50 VGS ID Semiconductor Group 6 07/96 BUZ 10 Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 14 A, VGS = 10 V 0.22 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 98% VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 typ 0.06 0.04 0.02 0.00 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C 10 0 A IF 10 1 Ciss Coss 10 -1 Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 10 Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 23 A, VDD = 25 V RGS = 25 Ω, L = 15.1 µH 9 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 38 A 16 V EAS 7 6 VGS 12 0,2 VDS max 0,8 VDS max 10 5 8 4 6 3 2 1 0 20 4 2 0 40 60 80 100 120 °C 160 0 4 8 12 16 20 24 28 nC 34 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 10 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96