BUZ100S

BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 77 A RDS(on) 0.015 Ω Package Ordering Code BUZ 100 S TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 77 55 Pulsed drain current TC = 25 °C IDpuls 308 E AS Avalanche energy, single pulse ID = 77 A, V DD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 77 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 77 17 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 170 V W Semiconductor Group 1 30/Jan/1998 BUZ 100 S SPP77N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.88 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 130 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 55 A Ω 0.01 0.015 Semiconductor Group 2 30/Jan/1998 BUZ 100 S SPP77N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 55 A gfs S 25 pF 1900 2375 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 615 770 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 310 390 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 77 A RG = 4.7 Ω tr 15 25 Rise time V DD = 30 V, VGS = 10 V, ID = 77 A RG = 4.7 Ω td(off) 30 45 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 77 A RG = 4.7 Ω tf 40 60 Fall time V DD = 30 V, VGS = 10 V, ID = 77 A RG = 4.7 Ω Qg(th) 25 40 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(7) 2.5 3.8 Gate charge at 7.0 V V DD = 40 V, ID = 77 A, VGS =0 to 7 V Qg(total) 50 75 Gate charge total V DD = 40 V, ID = 77 A, VGS =0 to 10 V V (plateau) 65 100 V Gate plateau voltage V DD = 40 V, ID = 77 A Semiconductor Group 3 5.9 30/Jan/1998 BUZ 100 S SPP77N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 77 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 308 V Inverse diode forward voltage V GS = 0 V, IF = 154 A trr 1.25 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 105 160 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.16 0.25 Semiconductor Group 4 30/Jan/1998 BUZ 100 S SPP77N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 80 180 W Ptot 140 120 ID A 60 50 100 40 80 30 60 40 20 0 0 20 40 60 80 100 120 140 °C 180 20 10 0 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 K/W D A V t = 31.0µs p ID 10 2 DS (o n) ZthJC 100 µs 10 -1 R = DS /I 10 -2 D = 0.50 1 ms 10 -3 0.20 0.10 10 1 10 ms 0.05 10 -4 single pulse 0.02 0.01 DC 10 0 0 10 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 30/Jan/1998 BUZ 100 S SPP77N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 170 A 140 Ptot = 170W l Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.050 kj i VGS [V] Ω ha b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e f g h ID 0 RDS (on).040 0.035 0.030 0.025 0.020 0.015 0.010 120 g c d e 100 ff g 80 e h i 60 40 c j dk l i j k VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 k h i j 8.0 9.0 10.0 20.0 20 0 a b 0.005 0.000 V 5.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 120 140 A 170 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 350 A I D 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 V VGS 20 Semiconductor Group 6 30/Jan/1998 BUZ 100 S SPP77N05 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 55 A, VGS = 10 V 0.050 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID = 130µA 5.0 V 4.4 Ω RDS (on) 0.040 0.035 0.030 0.025 98% 0.020 0.015 0.010 typ VGS(th) 4.0 3.6 3.2 2.8 2.4 2.0 1.6 typ max 1.2 0.8 0.005 0.000 -60 -20 20 60 100 °C 180 0.4 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 A C pF IF 10 2 Ciss 10 3 Coss 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) Crss 10 2 0 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 30/Jan/1998 BUZ 100 S SPP77N05 Avalanche energy EAS = ƒ(Tj) parameter: ID = 77 A, VDD = 25 V RGS = 25 Ω, L = 128 µH 400 mJ EAS 320 280 240 200 160 120 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 77 A 16 V VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 4 80 40 0 20 40 60 80 100 120 140 °C 180 2 0 0 10 20 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 30/Jan/1998