BUZ100SL-4

Preliminary data BUZ 100SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 100SL-4 VDS 55 V ID 7.4 A RDS(on) 0.023 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 7.4 Unit A ID IDpuls 29.6 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 7.4 A, VDD = 25 V, RGS = 25 Ω L = 13.8 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 °C Semiconductor Group 1 01/Oct/1997 Preliminary data BUZ 100SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.019 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 130 µA Zero gate voltage drain current IDSS 0.1 1 100 µA VDS = 55 V, VGS = 0 V, Tj = -40 °C VDS = 55 V, VGS = 0 V, Tj = 25 °C VDS = 55 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS 100 nA Ω 0.023 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 7.4 A Semiconductor Group 2 01/Oct/1997 Preliminary data BUZ 100SL-4 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 20 2130 600 320 - S pF 2660 750 400 ns 37 55 VDS≥ 2 * ID * RDS(on)max, ID = 7.4 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Rise time tr 67 100 VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Turn-off delay time td(off) 91 140 VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Fall time tf 42 3 58 93 2.92 65 nC 4.5 86 140 V 3 01/Oct/1997 VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 7.4 A, VGS =0 to 5 V Gate charge total Qg(total) - VDD = 40 V, ID = 7.4 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 7.4 A Semiconductor Group Preliminary data BUZ 100SL-4 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed A 0.9 75 0.21 7.4 29.6 V 1.6 ns 115 µC 0.315 Values typ. max. Unit ISM VSD trr Qrr TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 14.8 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 01/Oct/1997 Preliminary data BUZ 100SL-4 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 7.5 A 6.5 2.8 W 2.4 Ptot 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 °C 180 ID 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 °C 180 TA TA Semiconductor Group 5 01/Oct/1997 Preliminary data BUZ 100SL-4 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 17 k lj Ptot = 2W h i fe A gd VGS [V] a 2.5 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.070 a Ω 0.060 ID 14 c RDS (on).055 0 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 VGS [V] = 0.005 0.000 0 a 3.0 2.5 3.5 b 4.0 c 4.5 d 5.0 e f 5.5 6.0 g 6.5 h i j 7.0 8.0 10.0 b c d 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 12 10 8 e f g h i b 6 j k 4 bl f hg ij c d e 2 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 2 4 6 8 10 12 A 15 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 01/Oct/1997 Preliminary data BUZ 100SL-4 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 7.4 A, VGS = 5 V 0.065 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 130 µA 4.6 V 4.0 Ω 0.055 RDS (on) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 °C 180 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 typ 1.6 2% 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 A C pF IF Ciss 10 2 10 3 Coss 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 10 0 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 01/Oct/1997 Preliminary data BUZ 100SL-4 Avalanche energy EAS = ƒ(Tj) parameter: ID = 7.4 A, VDD = 25 V RGS = 25 Ω, L = 13.8 mH 400 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 7 A 16 V EAS 320 280 240 200 160 120 VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 80 40 0 20 2 0 0 40 60 80 100 120 140 °C 180 20 40 60 80 100 nC 130 Tj QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 01/Oct/1997