BUZ101S

Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Type BUZ 101 S Pin 2 D Pin 3 S VDS 55 V ID 22 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code Q67040-S4013-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls 88 TC = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 22 5.5 A mJ kV/µs IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 55 V W TC = 25 °C Semiconductor Group 1 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 3 0.1 10 0.04 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 40 µA Zero gate voltage drain current IDSS 0.1 1 100 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current IGSS 100 nA Ω 0.06 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 16 A Semiconductor Group 2 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 7 490 170 95 - S pF 615 215 120 ns 10 15 VDS≥ 2 * ID * RDS(on)max, ID = 16 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Rise time tr 25 38 VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Turn-off delay time td(off) 20 30 VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Fall time tf 20 0.5 13 17 5.9 30 nC 0.75 20 26 V 3 04/Nov/1997 VDD = 30 V, VGS = 10 V, ID = 22 A RG = 19.6 Ω Gate charge at threshold Qg(th) Qg(7) - VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V Gate charge at 7.0 V VDD = 40 V, ID = 22 A, VGS =0 to 7 V Gate charge total Qg(total) - VDD = 40 V, ID = 22 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 22 A Semiconductor Group Preliminary data BUZ 101 S SPP22N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.2 55 0.12 22 88 V 1.8 ns 85 µC 0.18 Values typ. max. Unit TC = 25 °C Inverse diode direct current,pulsed ISM - TC = 25 °C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 44 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 24 A 20 60 W 50 Ptot 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 °C 180 ID 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 °C 180 TC TC Semiconductor Group 5 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.19 Ptot = 55W l k j VGS [V] a 4.0 Ω 0.16 RDS (on) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 b a b c d e f g ID 40 i b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 35 30 25 20 15 10 5 c e g hd e f g h fi j k l h i j d VGS [V] = a 5.0 4.5 4.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 5 10 15 20 25 30 35 A 45 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 ID 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 16 A, VGS = 10 V 0.20 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 40 µA 4.6 V 4.0 Ω RDS (on)0.16 0.14 0.12 0.10 98% VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% 0.08 0.06 0.04 0.02 0.00 -60 2.0 1.6 typ 1.2 0.8 0.4 -20 20 60 100 °C 180 0.0 -60 -20 20 60 100 °C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 2 pF C 10 3 Ciss A IF 10 1 Coss 10 2 Crss 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 04/Nov/1997 Preliminary data BUZ 101 S SPP22N05 Avalanche energy EAS = f (Tj) parameter:ID=22A,VDD =25 V RGS =25 Ω , L = 372µH 100 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 22 A 16 V EAS 80 70 60 50 40 30 VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 4 20 10 0 20 2 0 0 40 60 80 100 120 140 °C Tj 180 4 8 12 16 nC 24 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 04/Nov/1997