BUZ 101 SL
SPP20N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 20 A
RDS(on) 0.07 Ω
Package
Ordering Code
BUZ 101 SL
TO-220 AB
Q67040-S4012-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 20 14
Pulsed drain current
TC = 25 °C
IDpuls
80
E AS
Avalanche energy, single pulse
ID = 20 A, V DD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C
mJ
90
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C
20 5.5
A mJ kV/µs
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 °C
± 14
55
V W
Semiconductor Group
1
29/Jan/1998
BUZ 101 SL
SPP20N05L
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 2.7 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 40 µA
V GS(th)
1.2
IDSS
1.6
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 4.5 V, ID = 14 A V GS = 10 V, ID = 14 A
Ω
0.057 0.034 0.07 0.04
Semiconductor Group
2
29/Jan/1998
BUZ 101 SL
SPP20N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Dynamic Characteristics
Transconductance
V DS≥ 2 * ID * RDS(on)max, ID = 14 A
gfs
S 7 14 pF 560 700
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
170
215
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
95
120 ns
Turn-on delay time
V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω
tr
15
25
Rise time
V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω
td(off)
35
55
Turn-off delay time
V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω
tf
15
25
Fall time
V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω
Qg(th)
15
25 nC
Gate charge at threshold
V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V
Qg(5)
0.8
1.2
Gate charge at 5.0 V
V DD = 40 V, ID = 20 A, VGS =0 to 5 V
Qg(total)
15
23
Gate charge total
V DD = 40 V, ID = 20 A, VGS =0 to 10 V
V (plateau)
24
36 V
Gate plateau voltage
V DD = 40 V, ID = 20 A
-
4.06
-
Semiconductor Group
3
29/Jan/1998
BUZ 101 SL
SPP20N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 °C
IS
A 20
Inverse diode direct current,pulsed
TC = 25 °C
ISM
V SD
-
80 V
Inverse diode forward voltage
V GS = 0 V, IF = 40 A
trr
1.12
1.8 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr
50
75 µC
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/µs
-
0.12
0.18
Semiconductor Group
4
29/Jan/1998
BUZ 101 SL
SPP20N05L
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V
22 A ID 18 16 14 12
60 W 50 Ptot 45 40 35 30
10 25 20 15 10 5 0 0 20 40 60 80 100 120 140 °C 180 8 6 4 2 0 0 20 40 60 80 100 120 140 °C 180
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 3
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1 K/W
A ID 10 2
/I
D
ZthJC
t = 28.0µs p
10 0
10 -1
DS (o n)
=
V
DS
100 µs
D = 0.50 10
-2
R
0.20 0.10 0.05
10
1
1 ms
10 -3 single pulse
0.02 0.01
10 ms
10 0 0 10
10
1
DC
V 10
2
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
29/Jan/1998
BUZ 101 SL
SPP20N05L
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
45 A ID 35
f
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
0.22
Ptot = 55W l
kji h g
VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
Ω
0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04
a
b
c
d
30 25 20
d
d e
e
f g h i
15 10 5
b
j k l
e f gh i j VGS [V] =
a 3.0 2.5 3.5 b 4.0 c 4.5 d 5.0 f e 5.5 6.0 g 6.5 h i j 7.0 8.0 10.0
c
0.02 0.00 V 5.0 0
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
4
8
12
16
20
24
28
A
36
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
80
A
I
D
60
50
40
30
20
10 0 0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
29/Jan/1998
BUZ 101 SL
SPP20N05L
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 14 A, VGS = 4.5 V
0.24
Gate threshold voltage
V GS(th)= f (Tj)
parameter:VGS=VDS,ID = 40µA
3.0 V 2.6
VGS(th)
Ω
0.20 RDS (on) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -60 -20 20 60 100 °C 180 98% typ
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 V
Tj
max
typ
min
200
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
pF
C
A IF
10 3
Ciss
10 1
Coss
10 2
Crss
10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%)
10 1 0
5
10
15
20
25
30
V
VDS
40
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
29/Jan/1998
BUZ 101 SL
SPP20N05L
Avalanche energy EAS = f (Tj) parameter:ID=20A,VDD =25 V RGS =25 Ω , L = 450µH
100 mJ
EAS
Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A
16
V VGS
80 70 60 50 40 30
12
10
8 0,2 VDS max 6 0,8 VDS max
4 20 10 0 20 40 60 80 100 120 140 °C
Tj
2 0 180 0 4 8 12 16 20 24 28 nC 34
Q Gate
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
65
V V(BR)DSS
61
59
57
55
53
51 49 -60
-20
20
60
100
°C
180
Tj
Semiconductor Group
8
29/Jan/1998