BUZ103S

BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 31 A RDS(on) 0.04 Ω Package Ordering Code BUZ 103 S TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 31 22 Pulsed drain current TC = 25 °C IDpuls 124 E AS Avalanche energy, single pulse ID = 31 A, V DD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C mJ 140 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 31 7.5 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 75 V W Semiconductor Group 1 30/Jan/1998 BUZ 103 S SPP31N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤2 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 50 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 22 A Ω 0.03 0.04 Semiconductor Group 2 30/Jan/1998 BUZ 103 S SPP31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 22 A gfs S 10 pF 720 900 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 230 300 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 125 160 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tr 10 15 Rise time V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω td(off) 25 40 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω tf 25 40 Fall time V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω Qg(th) 20 30 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(7) 0.7 1 Gate charge at 7.0 V V DD = 40 V, ID = 31 A, VGS =0 to 7 V Qg(total) 20 30 Gate charge total V DD = 40 V, ID = 31 A, VGS =0 to 10 V V (plateau) 25 40 V Gate plateau voltage V DD = 40 V, ID = 31 A Semiconductor Group 3 5.9 30/Jan/1998 BUZ 103 S SPP31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 31 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 124 V Inverse diode forward voltage V GS = 0 V, IF = 62 A trr 1.2 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 55 85 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.1 0.15 Semiconductor Group 4 30/Jan/1998 BUZ 103 S SPP31N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 32 80 W Ptot ID A 60 24 50 20 40 16 30 12 20 8 10 0 0 20 40 60 80 100 120 140 °C 180 4 0 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID t = 13.0µs p ZthJC 10 2 = V /I D 10 0 DS 10 -1 R DS (o n) 100 µs D = 0.50 10 -2 0.20 0.10 0.05 10 1 1 ms 10 -3 10 ms 0.02 single pulse 0.01 10 0 0 10 DC 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 30/Jan/1998 BUZ 103 S SPP31N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 70 A 60 ID 55 50 h i Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.13 Ptot = 75W l k j VGS [V] a 4.0 b c d e 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω 0.11 RDS (on) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 a b c d e f g 45 40 35 30 25 20 15 10 5 0 0.0 1.0 2.0 3.0 c b a e g f g fh i j k h i j dl 0.02 0.01 0.00 V 5.5 0 VGS [V] = a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h j i 9.0 10.0 20.0 4.0 10 20 30 40 50 A 65 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 30/Jan/1998 BUZ 103 S SPP31N05 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 22 A, VGS = 10 V 0.13 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =50µA 5.0 V 4.4 VGS(th) Ω 0.11 RDS (on) 0.10 0.09 0.08 0.07 0.06 0.05 typ 0.04 0.03 0.02 0.01 0.00 -60 -20 20 60 100 °C 180 98% 4.0 3.6 3.2 2.8 2.4 2.0 1.6 typ max 1.2 0.8 0.4 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 A C pF IF 10 2 10 3 Ciss 10 1 Tj = 25 °C typ Tj = 175 °C typ Coss Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 Crss 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 30/Jan/1998 BUZ 103 S SPP31N05 Avalanche energy EAS = ƒ(Tj) parameter: ID = 31 A, VDD = 25 V RGS = 25 Ω, L = 291 µH 150 mJ 130 EAS 120 110 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 °C 180 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 31 A 16 V VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 4 2 0 0 4 8 12 16 20 24 28 32 nC 38 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 30/Jan/1998