BUZ104SL

BUZ 104 SL SPP13N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 12.5 A RDS(on) 0.12 Ω Package Ordering Code BUZ 104 SL TO-220 AB Q67040-S4006-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 12.5 8.8 Pulsed drain current TC = 25 °C IDpuls 50 E AS Avalanche energy, single pulse ID = 12.5 A, VDD = 25 V, RGS = 25 Ω L = 666 µH, Tj = 25 °C mJ 52 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 12.5 A, V DS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 12.5 3.5 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 35 V W Semiconductor Group 1 29/Jan/1998 BUZ 104 SL SPP13N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 4.3 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 20 µA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 8.8 A V GS = 10 V, ID = 8.8 A Ω 0.105 0.062 0.12 0.07 Semiconductor Group 2 29/Jan/1998 BUZ 104 SL SPP13N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 8.8 A gfs S 5 pF 317 400 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 97 120 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 54 70 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 12.5 A RG = 16 Ω tr 14.5 22 Rise time V DD = 30 V, VGS = 4.5 V, ID = 12.5 A RG = 16 Ω td(off) 106 160 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 12.5 A RG = 16 Ω tf 11 17 Fall time V DD = 30 V, VGS = 4.5 V, ID = 12.5 A RG = 16 Ω Qg(th) 13.5 20 nC Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V Qg(5) 0.37 0.56 Gate charge at 5.0 V V DD = 40 V, ID = 12.5 A, V GS =0 to 5 V Qg(total) 7.85 12 Gate charge total V DD = 40 V, ID = 12.5 A, V GS =0 to 10 V V (plateau) 13.44 20 V Gate plateau voltage V DD = 40 V, ID = 12.5 A - 4 - Semiconductor Group 3 29/Jan/1998 BUZ 104 SL SPP13N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 12.5 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 50 V Inverse diode forward voltage V GS = 0 V, IF = 25 A trr 1.14 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 50 75 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.1 0.15 Semiconductor Group 4 29/Jan/1998 BUZ 104 SL SPP13N05L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V 13 A 36 W 11 Ptot 28 24 8 20 16 12 8 4 1 0 0 20 40 60 80 100 120 140 °C 180 0 0 20 40 60 80 100 120 140 °C 180 7 6 5 4 3 2 ID 10 9 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 2 t = 3.6µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 1 R V = DS /I D 10 µs ZthJC 10 0 DS (o n) 100 µs 10 -1 D = 0.50 0.20 10 0 1 ms 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 29/Jan/1998 BUZ 104 SL SPP13N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 28 A 24 ID 22 20 18 16 14 12 10 8 6 4 2 0 b a c e g Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.38 Ptot = 35W lkj i h VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 Ω 0.32 RDS (on) 0.28 0.24 0.20 0.16 0.12 a b c d e f fd e f g h i dj k l g 0.08 0.04 0.00 V 5.0 0 4 8 12 16 20 VGS [V] = a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 h i kj k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 26 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 45 A I D 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/Jan/1998 BUZ 104 SL SPP13N05L Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8.8 A, VGS = 4.5 V 0.38 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 20µA 3.0 V 2.6 VGS(th) Ω 0.32 RDS (on) 0.28 0.24 0.20 98% 0.16 0.12 0.08 0.04 0.00 -60 -20 20 60 100 °C 180 typ 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj max typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 A C pF Ciss IF 10 1 10 2 Coss Crss 10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/Jan/1998 BUZ 104 SL SPP13N05L Avalanche energy EAS = f (Tj) parameter:ID=12.5 A,VDD =25 V RGS =25 Ω , L = 666 µH 60 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 12 A 16 V mJ EAS VGS 40 12 10 30 8 0,2 VDS max 6 0,8 VDS max 20 4 10 2 0 20 40 60 80 100 120 140 °C Tj 0 180 0 2 4 6 8 10 12 14 16 nC 20 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 29/Jan/1998