BUZ111

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.01 Ω Package Ordering Code BUZ111SL TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 °C ID A 80 Pulsed drain current TC = 25 °C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C mJ 700 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 80 25 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 14 250 V W Semiconductor Group 1 28/Jan/1998 BUZ111SL SPP80N05L Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.6 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 240 µA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 4.5 V, ID = 80 A V GS = 10 V, ID = 80 A Ω 0.0085 0.0055 0.01 0.007 Semiconductor Group 2 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max = 2 V, ID = 80 A gfs S 30 95 pF 3850 4800 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 1090 1357 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 570 715 ns Turn-on delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω tr 30 45 Rise time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω td(off) 37 56 Turn-off delay time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω tf 70 105 Fall time V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Ω Qg(th) 36 55 nC Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V Qg(5) 3.8 5.7 Gate charge at 5.0 V V DD = 40 V, ID = 80 A, VGS =0 to 5 V Qg(total) 92 138 Gate charge total V DD = 40 V, ID = 80 A, VGS =0 to 10 V V (plateau) 155 232 V Gate plateau voltage V DD = 40 V, ID = 80 A - 3.4 - Semiconductor Group 3 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 °C IS A 80 Inverse diode direct current,pulsed TC = 25 °C ISM V SD - 320 V Inverse diode forward voltage V GS = 0 V, IF = 160 A trr 1.25 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 105 157 µC Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/µs - 0.31 0.47 Semiconductor Group 4 28/Jan/1998 BUZ111SL SPP80N05L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V 90 A 260 W 220 Ptot 200 180 160 140 120 100 80 60 40 ID 70 60 50 40 30 20 10 20 0 0 20 40 60 80 100 120 140 °C 180 0 0 20 40 60 80 100 120 140 °C 180 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 K/W D DS A DS (o n) t = 29.0µs p /I ID 10 2 ZthJC 100 µs R = 10 -1 V 10 -2 D = 0.50 1 ms 10 -3 0.20 0.10 10 1 10 ms 0.05 10 -4 single pulse 0.02 0.01 DC 10 0 0 10 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 28/Jan/1998 BUZ111SL SPP80N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 180 A ID 140 120 100 80 60 40 20 0 a c VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.032 Ptot = 250W k l j i hg f e Ω RDS (on) 0.024 a b c dc d e f g h i j k l 0.020 0.016 0.012 d e f hg j ki a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 0.008 b 0.004 VGS [V] = 0.000 V 5.0 0 20 40 60 80 100 A 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 28/Jan/1998 BUZ111SL SPP80N05L Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 80 A, VGS = 4.5 V 0.032 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS,ID = 240µA 3.0 V 2.6 VGS(th) Ω RDS (on) 0.024 2.4 2.2 2.0 0.020 1.8 1.6 98% 1.4 1.2 1.0 max 0.016 typ 0.012 0.008 0.8 0.6 0.004 0.000 -60 -20 20 60 100 °C 180 0.4 0.2 0.0 -60 -20 20 60 100 140 V Tj typ min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 nF C Ciss A IF 10 0 Coss Crss 10 2 10 -1 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 28/Jan/1998 BUZ111SL SPP80N05L Avalanche energy EAS = ƒ(Tj) parameter: ID = 80 A, VDD = 25 V RGS = 25 Ω, L = 220 µH 750 mJ 650 EAS 600 550 500 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 °C 180 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 80 A 16 V VGS 12 10 8 0,2 VDS max 6 0,8 VDS max 4 2 0 0 40 80 120 160 nC 220 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 28/Jan/1998