BUZ12A

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 A VDS 50 V ID 42 A RDS(on) 0.035 Ω Package TO-220 AB Ordering Code C67078-S1331-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 44 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 42 2.5 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.2 µH, Tj = 25 °C Gate source voltage Power dissipation 41 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.03 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.035 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 32 A Semiconductor Group 2 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 12 23 1700 800 280 - S pF 2300 1200 420 ns 35 50 VDS≥ 2 * ID * RDS(on)max, ID = 32 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 85 130 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 220 280 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 140 180 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 12 A Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.8 80 0.14 42 168 V 2.2 ns µC Values typ. max. Unit TC = 25 °C Inverse diode direct current,pulsed ISM - TC = 25 °C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 84 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 12 A Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 45 A 130 W 110 Ptot 100 90 80 70 60 50 ID 35 30 25 20 15 40 30 20 10 0 0 20 40 60 80 100 120 °C 160 0 0 20 40 60 80 100 120 °C 160 10 5 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 0 t = 47.0µs p ID /ID 10 2 ZthJC 10 -1 = VD S 100 µs RD ) on S( 1 ms 10 -2 D = 0.50 0.20 10 1 10 ms 10 -3 0.10 0.05 10 -4 DC 10 0 0 10 10 -5 -7 10 single pulse 0.02 0.01 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 12 A Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 100 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.11 Ptot = 125W l kj i ha b Ω VGS [V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d e f g ID 80 70 60 50 e 0.09 RDS (on) 0.08 0.07 0.06 0.05 0.04 j h i g c d e ff g h i j 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 a c d k 10.0 l 20.0 0.03 0.02 k b VGS [V] = 0.01 0.00 7.0 0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 V 10 20 30 40 50 60 70 A 90 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 A 50 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 30 S ID 45 40 35 30 25 20 15 10 gfs 24 22 20 18 16 14 12 10 8 6 4 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 2 0 0 10 20 30 40 50 A ID 65 Semiconductor Group 6 07/96 BUZ 12 A Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 32 A, VGS = 10 V 0.09 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on)0.07 0.06 0.05 98% VGS(th) 3.6 3.2 2.8 typ 98% 0.04 0.03 0.02 2.4 2.0 1.6 1.2 0.8 2% typ 0.01 0.00 -60 -20 20 60 100 °C 160 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 nF C A Ciss 10 0 IF 10 2 Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 12 A Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 Ω, L = 23.2 µH 45 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 16 V EAS 35 30 VGS 12 0,2 VDS max 0,8 VDS max 10 25 8 20 6 15 10 5 0 20 40 60 80 100 120 °C 160 4 2 0 0 10 20 30 40 50 60 70 80 nC 100 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 12 A Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96