BUZ346

BUZ 346 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 346 VDS 50 V ID 58 A RDS(on) 0.018 Ω Package TO-218 AA Ordering Code C67078-S3120-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 58 Unit A ID IDpuls 232 TC = 73 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 58 4.5 mJ ID = 58 A, VDD = 25 V, RGS = 25 Ω L = 21.4 µH, Tj = 25 °C Gate source voltage Power dissipation 72 VGS Ptot ± 20 170 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 0.74 ≤ 75 C 55 / 150 / 56 °C K/W 1 07/96 BUZ 346 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 10 10 0.012 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.018 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 47 A Semiconductor Group 2 07/96 BUZ 346 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 30 42 2900 1400 500 - S pF 4300 2100 750 ns 55 80 VDS≥ 2 * ID * RDS(on)max, ID = 47 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 140 210 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 420 560 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 250 330 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 346 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.6 100 0.3 58 232 V 2 ns µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 116 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 346 Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 60 A 180 W 50 Ptot 140 120 100 ID 45 40 35 30 80 60 40 25 20 15 10 20 0 0 5 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 3 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 A ID = 10 2 ) on S( /ID t = 28.0µs p K/W VD S 100 µs ZthJC 10 -1 1 ms RD 10 ms D = 0.50 0.20 10 1 10 -2 0.10 0.05 single pulse 0.02 0.01 DC 10 0 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 346 Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 130 A 110 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.055 a b c d e f Ptot = 170W kj i h l g f VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Ω 0.045 RDS (on) 0.040 0.035 0.030 0.025 0.020 0.015 0.010 a gl h i j k ID 100 90 80 70 60 50 40 30 20 10 c e c d e df g h i j k l b VGS [V] = 0.005 V 5.0 0.000 0 a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 A 130 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 70 A 60 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 50 S ID 55 50 45 gfs 40 35 30 40 35 30 25 20 15 10 5 0 0 5 0 1 2 3 4 5 6 7 8 V 10 0 10 20 30 40 50 15 10 25 20 VGS A ID 65 Semiconductor Group 6 07/96 BUZ 346 Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 47 A, VGS = 10 V 0.045 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on).035 0 0.030 0.025 98% VGS(th) 3.6 3.2 2.8 typ 98% 0.020 0.015 0.010 2.4 2.0 2% typ 1.6 1.2 0.8 0.005 0.000 -60 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 nF C 10 0 Ciss Coss A IF 10 2 Crss 10 -1 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 346 Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 58 A, VDD = 25 V RGS = 25 Ω, L = 21.4 µH 75 mJ 65 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 87 A 16 V EAS 60 55 50 45 40 35 30 25 20 15 10 5 0 20 VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 4 2 0 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 nC 160 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 346 Not for new design Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96