BUZ 382
SIPMOS ® Power Transistor
• N channel • Enhancement mode • FREDFET
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 382
VDS
400 V
ID
12.5 A
RDS(on)
0.4 Ω
Package TO-218 AA
Ordering Code C67078-A3207-A2
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 12.5
TC = 30 °C
Pulsed drain current
IDpuls
50
TC = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 125
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 382
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
400 3.5 20 100 10 0.35 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
250 1000
µA
VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.4
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 8 A
Semiconductor Group
2
07/96
BUZ 382
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
3.3 6.2 3800 300 120 -
S pF 4900 500 200 ns 50 75
VDS≥ 2 * ID * RDS(on)max, ID = 8 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Rise time
tr
80 120
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Turn-off delay time
td(off)
330 430
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Fall time
tf
110 140
VDD = 30 V, VGS = 10 V, ID = 2.9 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 382
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.3 180 0.65 12.5 50 V 1.7 ns 250 µC 1.2 Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 25 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 382
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
13 A 11
130 W 110
Ptot
100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 160
ID
10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
t = 21.0µs p
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
10 1
R
DS (o n)
=V
DS
/I
ID
D
100 µs
ZthJC
10 0
1 ms
10 -1 D = 0.50
10 ms
0.20 0.10 10 -2 0.05 0.02
10
0
DC single pulse 10
-1
0.01
10
0
10
1
10
2
V 10
3
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 382
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
28 A 24
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
1.3
Ptot = 125W
l
kj i
VGS [V]
a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
Ω
1.1
a
b
c
d
e
f
g
h
i
ID
22 20 18 16 14 12 10 8 6 4 2 0 0
a c e g
hb
c d e
RDS (on)
1.0 0.9 0.8 0.7 0.6 0.5 0.4
l j k
ff
g h i j
dk
l
0.3 0.2
VGS [V] =
a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0
b
0.1 0.0 V 26 0
4
8
12
16
20
4
8
12
16
20
A
28
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
18 A
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
8.0
S
ID
14 12
gfs
6.0
5.0 10 4.0 8 3.0 6 4 2 0 0 2.0
1.0 0.0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12
VGS
A ID
15
Semiconductor Group
6
07/96
BUZ 382
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8 A, VGS = 10 V
1.2
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
1.0
98% typ
RDS (on)
VGS(th)
3.6 3.2
0.9 0.8 0.7 0.6 2.8 2.4
2%
98%
0.5 0.4 0.3 0.2 0.1 0.0 -60 -20 20 60 100 °C 160
2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160
typ
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C 10 0
Ciss IF
A
10 1
Coss
10 -1 10 0
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0 10 -1 0.0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
07/96
BUZ 382
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 17 A
16
480 V 460
V
V(BR)DSS 450
440 430 420 410 400 390 380 370 360 -60
VGS
12 0,2 VDS max 0,8 VDS max
10
8
6
4
2 0 -20 20 60 100 °C 160 0 20 40 60 80 100 120 140 160 nC 190
Tj
Q Gate
Semiconductor Group
8
07/96
BUZ 382
Package Outlines TO-218 AA Dimension in mm
Semiconductor Group
9
07/96
