BUZ384

BUZ 384 SIPMOS ® Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 G Pin 2 D Pin 3 S Type BUZ 384 VDS 500 V ID 10.5 A RDS(on) 0.6 Ω Package TO-218 AA Ordering Code C67078-A3209-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 10.5 TC = 25 °C Pulsed drain current IDpuls 42 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 384 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3.5 20 100 10 0.55 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.6 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 6.5 A Semiconductor Group 2 07/96 BUZ 384 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2.7 6.7 3800 250 100 - S pF 4900 400 170 ns 50 75 VDS≥ 2 * ID * RDS(on)max, ID = 6.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Rise time tr 80 120 VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Turn-off delay time td(off) 330 430 VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Fall time tf 110 140 VDD = 30 V, VGS = 10 V, ID = 2.8 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 384 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.3 180 0.65 10.5 42 V 1.7 ns 250 µC 1.2 Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 21 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 384 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 11 A 130 W 110 Ptot 100 90 80 70 60 50 40 30 ID 9 8 7 6 5 4 3 2 20 10 0 0 20 40 60 80 100 120 °C 160 1 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 20.0µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID DS 100 µs ZthJC 10 0 10 1 DS (o n) =V /I D R 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 0.05 0.02 0.01 DC single pulse 10 -1 10 0 10 1 10 2 V 10 3 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 384 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 24 A 20 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.8 a b c d e f Ptot = 125W l kih j g f VGS [V] a 4.0 4.5 5.0 5.5 6.0 6.5 Ω RDS (on) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 ID 18 16 14 12 10 8 6 4 2 0 0 4 8 12 16 20 a b c e b c d e f d g 7.0 h i j 7.5 8.0 9.0 g i k l h j k 10.0 l 20.0 24 V 30 0 4 8 12 16 A 22 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 18 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 10 S ID 14 12 gfs 8 7 6 10 5 8 4 6 3 4 2 0 0 2 1 0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 VGS A ID 16 Semiconductor Group 6 07/96 BUZ 384 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 6.5 A, VGS = 10 V 1.8 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 1.4 1.2 98% typ VGS(th) 3.6 3.2 2.8 1.0 0.8 0.6 0.4 2.4 2% 98% typ 2.0 1.6 1.2 0.8 0.2 0.0 -60 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C 10 0 Ciss IF A 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 384 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 600 V 580 V V(BR)DSS 70 5 560 550 540 530 520 510 500 490 480 470 460 450 -60 VGS 12 0,2 VDS max 10 0,8 VDS max 8 6 4 2 0 -20 20 60 100 °C 160 0 40 80 120 160 nC 220 Tj Q Gate Semiconductor Group 8 07/96 BUZ 384 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96