BUZ70

BUZ 70 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 70 VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1334-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A ID IDpuls 48 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12 1 mJ ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C Gate source voltage Power dissipation 6 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 70 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 3 0.1 10 10 0.12 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.15 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 7.5 A Semiconductor Group 2 07/96 BUZ 70 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 2 5.7 360 160 50 - S pF 480 250 90 ns 15 25 VDS≥ 2 * ID * RDS(on)max, ID = 7.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 30 45 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 40 55 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 55 75 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 70 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 12 48 V 1.8 ns µC Values typ. max. Unit TC = 25 °C Inverse diode direct current,pulsed ISM - TC = 25 °C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 25 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 70 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 13 A 45 W 11 Ptot 35 30 ID 10 9 8 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 2.0µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A 10 1 R DS (o n) = ID DS / I D 10 µs V 100 µs ZthJC 10 0 1 ms 10 -1 10 ms D = 0.50 0.20 10 0 0.10 DC 10 -2 single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 70 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 28 A 24 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.45 a b c d e f g h i Ptot = 40W l kj i VGS [V] a 4.0 Ω RDS (on)0.35 0.30 0.25 0.20 j ID 22 20 18 16 f g hb c d e f g 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 14 12 10 d e h i j k 0.15 l k 8 6 4 2 0 0 1 2 3 4 5 6 a c b l 0.10 0.05 0.00 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 7 V 9 0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 30 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 7.5 S ID 24 22 20 18 16 14 12 10 8 6 4 2 0 0 gfs 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 2 3 4 5 6 7 8 V VGS 10 0 4 8 12 16 20 A ID 28 Semiconductor Group 6 07/96 BUZ 70 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 7.5 A, VGS = 10 V 0.38 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.32 RDS (on) 0.28 98% VGS(th) 3.6 3.2 typ 0.24 0.20 0.16 0.12 2.8 98% typ 2.4 2.0 1.6 1.2 2% 0.08 0.04 0.00 -60 -20 20 60 100 °C 160 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C 10 0 A IF 10 1 Ciss Coss 10 -1 10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 70 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 12 A, VDD = 25 V RGS = 25 Ω, L = 48.6 µH 6.5 mJ 5.5 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 18 A 16 V EAS 5.0 4.5 4.0 3.5 VGS 12 0,2 VDS max 0,8 VDS max 10 8 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 °C 160 0 0 2 4 6 8 10 12 14 16 nC 19 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 71 V 68 66 64 V(BR)DSS 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 70 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96