BXY42

BXY42

  • 厂商:

    SIEMENS(西门子)

  • 封装:

  • 描述:

    BXY42 - HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed...

  • 详情介绍
  • 数据手册
  • 价格&库存
BXY42 数据手册
HiRel Silicon PIN Diode Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package qualified ESA/SCC Detail Spec. No.: 5513/017 Electrostatic discharge sensitive device, observe handling precautions! T BXY 42 ESD: T1 Type BXY 42-T (ql) BXY 42-T1 (ql) Marking - Ordering Code see below see below Pin Configuration Package T T1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X143 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X168 (see Chapter Order Instructions for ordering example) Semiconductor Group 1 Draft A03 1998-04-01 BXY 42 Table 1 Parameter Maximum Ratings Symbol 1) Limit Values 50 5 600 350 Unit V A mW Reverse voltage Peak forward current Power dissipation BXY 42-T BXY 42-T1 Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case BXY 42-T BXY 42-T1 1) VR IFM Ptot Top Tstg Tsol Tj Rth(j-c) - 55 to + 150 - 65 to + 175 + 250 175 200 350 °C °C °C °C K/W At tp = 1.0 ms, duty cycle = 0.001%. Semiconductor Group 2 Draft A03 1998-04-01 BXY 42 Electrical Characteristics Table 2 Parameter Reverse current 1 VR1 = 50 V Reverse current 2 DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.97 max. 10 5 1.1 mA nA V Unit IR1 IR2 VF VR2 = 40 V Forward voltage IF = 100 mA Table 3 Parameter Total capacitance VR = 50 V, f = 1 MHz Forward resistance f = 100 MHz, IF1 = 1 mA Forward resistance f = 100 MHz, IF2 = 10 mA Minority carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.20 2 1 50 max. 0.24 3.5 2.5 pF W W ns 35 Unit CT RF1 RF2 tL Semiconductor Group 3 Draft A03 1998-04-01 BXY 42 Order Instructions Full type variant including package variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BXY42- (x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702X168 BXY42-T1 ES For BXY42 in T1 Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A03 1998-04-01 BXY 42 Figure 1 Symbol T Package Millimetre min. max. 1.45 1.35 0.40 1.30 1.15 - A B C Semiconductor Group 5 Draft A03 1998-04-01 BXY 42 Figure 2 Symbol T1 Package Millimetre min. max. 1.45 1.35 0.40 0.50 0.30 0.10 0.60 1.30 1.15 0.10 0.06 5.50 0.40 A B C D E F G H Semiconductor Group 6 Draft A03 1998-04-01
BXY42
1. 物料型号: - 型号为BXY 42,包括BXY 42-T和BXY 42-T1两种封装类型。

2. 器件简介: - 该器件是西门子公司生产的高可靠性离散和小信号微波半导体,是一种用于高速切换射频信号的PIN二极管,具有非常低的电容值,并且采用密封微波封装,符合ESA/SCC详细规格5513/017,是静电放电敏感器件,需要遵守处理预防措施。

3. 引脚分配: - BXY 42-T和BXY 42-T1都具有2个引脚。

4. 参数特性: - 反向电压:50V - 峰值正向电流:5A - 总功耗:BXY 42-T为600mW,BXY 42-T1为350mW - 工作温度范围:-55至+150℃ - 存储温度范围:-65至+175℃ - 焊接温度:+250℃ - 结温:175℃ - 热阻:BXY 42-T为200K/W,BXY 42-T1为350K/W

5. 功能详解: - 该二极管具有低反向电流、低正向电压降和低电容特性,适用于高速开关应用。

6. 应用信息: - 适用于需要高可靠性和高性能微波开关的应用场合。

7. 封装信息: - 提供T和T1两种封装类型,具体尺寸和封装细节在文档中有详细图纸说明。
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