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BXY44P

BXY44P

  • 厂商:

    SIEMENS

  • 封装:

  • 描述:

    BXY44P - HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF r...

  • 数据手册
  • 价格&库存
BXY44P 数据手册
HiRel Silicon PIN Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: BXY 44P FP Electrostatic discharge sensitive device, observe handling precautions! Marking Ordering Code see below Pin Configuration Package FP Type BXY 44P-FP (ql) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X166 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X165 (see Chapter Order Instructions for ordering example) Table 1 Parameter Reverse voltage Forward current Power dissipation Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case Maximum Ratings Symbol Limit Values 200 400 500 - 55 to + 150 - 65 to + 175 + 235 175 110 Unit V mA mW °C °C °C °C K/W VR IF Ptot Top Tstg Tsol Tj Rth(j-c) 1 Semiconductor Group Draft A02 1998-04-01 BXY 44P Electrical Characteristics Table 2 Parameter Reverse current 1 VR1 = 200 V Reverse current 2 VR2 = 100 V Forward voltage IF = 100 mA Table 3 Parameter Total capacitance VR = 50 V, f = 1 MHz Forward resistance f = 100 MHz, IF1 = 10 mA Forward resistance f = 100 MHz, IF2 = 1 mA Forward resistance f = 100 MHz, IF3 = 10 mA Minority carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Table 4 Parameter DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 1.0 max. 100 5 1.05 nA nA V Unit IR1 IR2 VF AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.50 900 20 3.8 800 max. 0.75 1200 27 5.0 pF W W W ns 700 11 2.0 300 Unit CT RF1 RF2 RF3 tL Matching Requirements at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. 15 15 % % Unit Difference in forward resistance 2 1) RF2 Difference in forward resistance 3 1) RF3 1) DRF [%] = 100 ´ (RF_Diode2 - RF_Diode1)/RF_Diode1 Semiconductor Group 2 Draft A02 1998-04-01 BXY 44P Order Instructions Full type variant including package variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BXY44P-(x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702X165 BXY44P-FP ES For BXY44P in Flatpack Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 3 Draft A02 1998-04-01 BXY 44P Figure 1 Symbol FP Package Millimetre min. max. 3.55 3.30 1.70 0.65 0.15 0.40 2.60 3.10 3.00 1.30 0.55 0.10 0.25 2.40 5.50 B B1 D D1 d d1 F L Semiconductor Group 4 Draft A02 1998-04-01
BXY44P 价格&库存

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