C67040-A4424-A2

BUP 410 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 410 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67040-A4424-A2 Pin 3 E VCE 600V IC 13A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 13 8 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 26 16 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 9 mJ IC = 6 A, VCC = 50 V, RGE = 25 Ω L = 500 µH, Tj = 25 °C Power dissipation Ptot 50 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-31-1996 BUP 410 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.8 2.9 - V VGE = VCE, IC = 0.2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 6 A, Tj = 25 °C VGE = 15 V, IC = 6 A, Tj = 125 °C VGE = 15 V, IC = 12 A, Tj = 25 °C VGE = 15 V, IC = 12 A, Tj = 125 °C Zero gate voltage collector current ICES 20 µA nA 100 VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 2 320 40 25 - S pF 430 60 40 VCE = 20 V, IC = 6 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-31-1996 BUP 410 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) Values typ. max. Unit ns 20 35 VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Ω Rise time - tr 45 70 VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Ω Turn-off delay time td(off) 175 240 VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Ω Fall time tf 160 220 VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Ω Semiconductor Group 3 Jul-31-1996 BUP 410 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 55 W Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 13 A 11 Ptot 45 40 35 30 25 20 15 IC 10 9 8 7 6 5 4 3 10 5 0 0 20 40 60 80 100 120 °C 160 2 1 0 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 t = 1.4µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 IGBT A K/W IC 10 1 10 µs ZthJC 10 0 100 µs 10 0 1 ms D = 0.50 10 ms 0.20 10 -1 0.10 0.05 10 -1 DC single pulse 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Jul-31-1996 BUP 410 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 12 A 10 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 12 A 10 17V 15V 13V 11V 9V 7V IC 9 8 7 6 5 4 3 2 1 0 0 IC 9 8 7 6 5 4 3 2 1 1 2 3 V 5 0 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 12 A 10 IC 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Jul-31-1996 BUP 410 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω 10 3 t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, IC = 6 A 10 3 t t ns ns tdoff tf tdoff 10 2 tr tf 10 2 tr tdon tdon 10 1 0 3 6 9 A 15 10 1 0 50 100 150 200 Ω 300 IC RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω 1.0 E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 6 A 0.5 E mWs E mWs Eoff 0.6 Eoff Eon 0.3 Eon 0.4 0.2 0.2 0.1 0.0 0 3 6 9 A 15 0.0 IC 0 50 100 150 200 Ω 300 RG Semiconductor Group 6 Jul-31-1996 BUP 410 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 6 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 -1 6 4 2 0 0 10 -2 0 Coss Crss 4 8 12 16 20 26 5 10 15 20 25 30 Q Gate V 40 VCE Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH 10 ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 I Csc/I C(90°C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0 100 200 300 400 500 600 V 800 VCE 0.0 0 100 200 300 400 500 600 V 800 VCE Semiconductor Group 7 Jul-31-1996 BUP 410 Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-31-1996