C67076-A1053-A2

SIMOPAC® Module BSM 191 F VDS = 1000 V ID = 28 A R DS(on) = 0.42 Ω q q q q q q q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 191 F Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1053-A2 Symbol Values 1000 1000 ± 20 28 110 – 55 … + 150 700 ≤ 0.18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS TC = 25 ˚C TC = 25 ˚C ID ID puls Tj, Tstg Ptot Rth JC 2) Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, Pulsed drain current, Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage , t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A ˚C W K/W Operating and storage temperature range Vis – – – – Vac mm – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 78 03.96 BSM 191 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 1000 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 18 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 18 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω Turn-off time toff (toff = td (off) + tf) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω Values typ. max. Unit V(BR)DSS 1000 – 3.0 – 4.0 V VGS(th) 2.1 I DSS – – 50 300 10 0.38 250 1000 µA IGSS – 100 nA Ω – 0.42 RDS(on) gfs Ciss Coss Crss td (on) tr td (off) tf 15 – – – – – – – 22 22 1.0 0.36 60 30 350 60 – 30 1.5 0.5 – – – – S nF ns Semiconductor Group 79 BSM 191 F Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Fast recovery reverse diode Continuous reverse drain current TC = 25 ˚C Pulsed reverse drain current TC = 25 ˚C Diode forward on-voltage IF = 56 A , VGS = 0 1) Values typ. max. Unit IS – – – 1.2 300 2.2 28 110 A ISM – VSD – 1.6 V ns – – µC – – Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V 1) trr Qrr upon request Semiconductor Group 80 BSM 191 F Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C, Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 µs , VDS = 25 V Semiconductor Group 81 BSM 191 F Continuous drain current ID = f (TC) parameter: VGS ≥ 10 V, Tj = 150 ˚C Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 ˚C) Drain-source on-state resistance RDS(on) = f (Tj) parameter: ID = 18 A; VGS = 10 V (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 82 BSM 191 F Typ. reverse recovery charge Qrr = f (Tj) parameter: diF/dt = 100 A/ µs, IF = 28 A, VR = 100 V Forward characteristics of fast-recovery reverse diode IF = f (VSD) parameter: Tj,tp = 80 µs (spread) Semiconductor Group 83 BSM 191 F Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 42 A Semiconductor Group 84