BUZ 70 L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1 G Type BUZ 70 L
Pin 2 D
Pin 3 S
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Package TO-220 AB
Ordering Code C67078-S1325-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 12 Unit A
ID IDpuls
48
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
12 1 mJ
ID = 12 A, VDD = 25 V, RGS = 25 Ω L = 48.6 µH, Tj = 25 °C
Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 6
VGS Vgs Ptot
± 14 ± 20
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
40
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
1
07/96
BUZ 70 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 1.6 0.1 10 10 0.12 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.15
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 5 V, ID = 6 A
Semiconductor Group
2
07/96
BUZ 70 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
2 7.5 420 160 60 -
S pF 560 250 110 ns 15 25
VDS≥ 2 * ID * RDS(on)max, ID = 6 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Rise time
tr
55 80
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
td(off)
45 60
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Fall time
tf
40 55
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 70 L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.5 60 0.1 12 48 V 1.8 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 25 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 70 L
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V
13 A
45 W
11
Ptot
35 30 25 20 15 10 5
ID
10 9 8 7 6 5 4 3 2 1
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
t = 20.0µs p
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
DS (o n)
10 1
=
V
DS
ID
/
I
100 µs
D
ZthJC
10 0
R
1 ms
10 -1
10 ms
D = 0.50 0.20
10
0
0.10 DC 10 -2 single pulse 0.05 0.02 0.01
10 -1 0 10
10
1
V 10
2
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 70 L
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
28 A 24
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
0.45
a b c d e
Ptot = 40W
lk i j h g
VGS [V] a 2.5
Ω
RDS (on)0.35
0.30 0.25 0.20 0.15 0.10
b
ID
22 20 18 16
e f
b c d e f g h
3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
14 12 10 8 6 4 2 0 0.0
a c
di
j k l
f g hi jk
0.05 0.00 0
VGS [V] =
a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0
1.0
2.0
3.0
4.0
5.0
V
6.5
4
8
12
16
A
24
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
30 A 26
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
10 S
ID
24 22 20 18 16 14 12 10 8 6 4 2 0 0
gfs
8 7 6 5 4 3 2 1 0
1
2
3
4
5
6
7
8
V
10
0
4
8
12
16
20
VGS
A ID
28
Semiconductor Group
6
07/96
BUZ 70 L
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 6 A, VGS = 5 V
0.70
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
0.60
RDS (on)0.55
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60
VGS(th)
3.6 3.2 2.8 2.4
98%
2.0
typ 98% typ
1.2 0.8 0.4 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 1.6
2%
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C 10 0
A
IF
10 1
Ciss
Coss
10 -1 10 0
Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0 10 -1 0.0
5
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
07/96
BUZ 70 L
Avalanche energy EAS = ƒ(Tj ) parameter: ID = 12 A, VDD = 25 V RGS = 25 Ω, L = 48.6 µH
6.5 mJ 5.5
Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 18 A
16
V
EAS
5.0 4.5 4.0 3.5
VGS
12
10 0,2 VDS max 0,8 VDS max
8 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 0 40 60 80 100 120 °C 160 0 4 4 6
2
8
12
16
20
nC
26
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
71 V
V(BR)DSS
68 66
64 62 60
58 56 54 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
07/96
BUZ 70 L
Package Outlines TO-220 AB Dimension in mm
Semiconductor Group
9
07/96