C67078-S1406-A2

BUZ 255 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 255 VDS 200 V ID 13 A RDS(on) 0.24 Ω Package TO-220 AB Ordering Code C67078-S1406-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13 Unit A ID IDpuls 52 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 13 9 mJ ID = 13 A, VDD = 50 V, RGS = 25 Ω L = 1.89 mH, Tj = 25 °C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.32 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 250 3 0.1 10 10 0.22 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 250 V, VGS = 0 V, Tj = 25 °C VDS = 250 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.24 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 8.5 A Semiconductor Group 2 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 9.4 970 165 85 - S pF 1300 250 130 ns 15 25 VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 60 90 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 160 250 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 60 80 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 255 Not for new design Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.3 200 1.7 13 52 V 1.6 ns µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 26 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 255 Not for new design Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 14 A 12 100 W Ptot 80 70 60 50 40 ID 11 10 9 8 7 6 5 30 20 10 0 0 4 3 2 1 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 t = 16.0µs p Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A DS ID DS (o n) /I D 10 1 =V 100 µs ZthJC 10 0 R 1 ms 10 -1 D = 0.50 10 ms 0.20 0.10 10 -2 0.05 0.02 0.01 single pulse 10 0 DC 10 -1 10 0 10 1 10 2 10 V -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 255 Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 30 A 26 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.75 Ptot = 95W l kj ih g VGS [V] Ω 0.65 a b c d e ID 24 22 20 18 16 14 12 10 8 6 4 2 0 0 a c e f a b c d e f g 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 VGS [V] = 0.05 0.00 0 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 dh i j k l f g h j k i b 2 4 6 8 10 12 14 V 17 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 32 parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 14 S A 12 ID 24 gfs 11 10 20 9 8 16 7 6 12 5 4 8 3 4 0 0 2 1 0 1 2 3 4 5 6 7 8 V VGS 10 0 4 8 12 16 20 24 A ID 30 Semiconductor Group 6 07/96 BUZ 255 Not for new design Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8.5 A, VGS = 10 V 1.0 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 98% VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C 10 0 A IF Ciss 10 1 10 -1 Coss Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 255 Not for new design Avalanche energy EAS = ƒ(Tj ) parameter: ID = 13 A, VDD = 50 V RGS = 25 Ω, L = 1.89 mH 220 mJ Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A 16 V EAS 180 160 140 120 VGS 12 10 0,2 VDS max 0,8 VDS max 8 100 80 60 40 2 20 0 20 0 40 60 80 100 120 °C 160 0 20 40 60 80 100 nC 140 6 4 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 255 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96