C67079-A1041-A5

BRT 11, BRT 12, BRT 13 SITAC® AC Switches Without Zero Voltage Switch • AC switch without zero-voltage detector • Electrically insulated between input and output circuit • Microcomputer-compatible by very low trigger current • UL-tested (file no. E 52744), code letter "J" • Available with the following options: Option 1: VDE 0884-approved Option 6: Pins in 10.16 mm spacing Option 7: Pins for sourface mounting Type BRT 11 H BRT 12 H BRT 12 H BRT 12 H BRT 12 H BRT 12 H Opt. 1 6 7 VDRM 400 V 400 V 600 V 600 V 600 V 600 V 600 V 600 V 800 V 800 V 800 V 800 V ITRMS 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA IFT 2 mA 3 mA 2 mA 2 mA 2 mA 2 mA 2 mA 3 mA 3 mA 2 mA 2 mA 2 mA 3 mA dv/d tcr 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs 10 kV/µs Marking BRT 11 H BRT 12 H BRT 12 H BRT 12 H BRT 12 H BRT 12 H Ordering Code C67079-A1000-A6 C67079-A1001-A6 C67079-A1041-A5 C67079-A1041-A8 C67079-A1041-A11 C67079-A1041-A14 BRT 11 M - BRT 11 M C67079-A1000-A10 1 + 6 600 V BRT 12 M BRT 12 M 1 BRT 13 H BRT 13 H BRT 13 H 6 7 BRT 12 M C67079-A1001-A10 BRT 12 M C67079-A1041-A6 BRT 13 H BRT 13 H BRT 13 H C67079-A1002-A6 C67079-A1042-A8 C67079-A1042-A11 BRT 13 M - BRT 13 M C67079-A1002-A10 Information Package 1 2 3 Anode Pin Configuration 4 A1 5 do not connect 6 A2 Cathode not Kathode 50 pcs per tube P-DIP-6 connected Semiconductor Group 1 12.96 BRT 11, BRT 12, BRT 13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified. Tj AC Switch Parameter Max. Power dissipation Chip or operating temperature Storage temperature Insulation test voltage 1) Symbol Value 630 -40 ...+ 100 -40 ...+ 150 5300 Unit mW °C Ptot Tj Tstg VIS VRMS between input/output circuit (climate in acc. with DIN 40046, part2, Nov.74) Reference voltage in acc. with VDE 0110 b (insulation group C) Creepage tracking resistance (in acc. with DIN IEC 112/VDE 0303, part 1) Insulation resistance Vref CTI 500 600 175 VRMS VDC (group IIIa acc. to DIN VDE 0109) Ris ≥ 1012 ≥ 1011 F ≥ 7.2 ≥ 7.2 Ω VIO = 500 V, TA = 25 °C VIO = 500 V, TA = 100 °C DIN humidity category, DIN 40 040 Creepage distance (input/output circuit) Clearance (input/output circuit) Input Circuit Parameter Param VR Continuous forward current Surge forward current, , Max. power dissipation, t ≤ 10 µs µs Symbol mm Value 6 20 1.5 30 Unit V mA A mW VR IF IFSM(I) Ptot Symbol BRT 11 400 300 3 600 Output Circuit Parameter Repetitive peak off-state voltage RMS on-state current Single cycle surge current (50 Hz) Max. power dissipation Semiconductor Group 2 BRT BRT 12 600 13 800 Unit V mA A mW 12.96 VDRM ITRMS ITSM(I) Ptot BRT 11, BRT 12, BRT 13 Characteristics at Tj = 25 °C, unless otherwise specified. Tj Input Circuit Parameter Forward Voltage, Symbol min. Values typ. 1.1 max. 1.35 V 10 µA Unit VF IR RthJA - IF = 10 mA Reverse current, VR = 6 V Thermal resistance 2) junction - ambient Output Circuit Parameter Critical rate of rise of off-state voltage Symbol min. d v/dtcr 10 5 d v/dtcrq 10 5 d i/dtcr 8 2 A/µs A Values typ. max. kV/µs Unit 750 K/W VD = 0.67 VDRM, Tj = 25 °C VD = 0.67 VDRM, Tj = 80 °C Critical rate of rise of voltage at current commutation communication VD = 0.67 VDRM, Tj = 25 °C, di/dtcrq ≤ 15 A/ms VD = 0.67 VDRM, Tj = 80 °C, di/dtcrq ≤ 15 A/ms Critical rate of rise of on-state current Pulse current Itp VT ID IH RthJA tp ≤ 5 µs, ff = 100 Hz,itp/dt/dt 8 A/µsµs p ≤ 5 µs, = 100 , d ditp ≤ ≤ 8 A/ On-state voltage, IT = 300 mA Off-state current - 0.5 80 - 2.3 V 100 µA 500 125 K/W TC = 100 °C, VDRM = VDRM Holding current, VD = 10 V Thermal resistance 2) junction - ambient Semiconductor Group 3 12.96 BRT 11, BRT 12, BRT 13 Response Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Trigger current Symbol min. Values typ. max. mA 0.4 0.8 ∆ IFT/∆ Tj 7 2 3 14 2 µA/K pF Unit IFT VD = 10 V type H type M Trigger current temperature gradient Capacitance between input and output circuit CIO VR = 0 V, f = 1 kHz 1) Test AC voltage in acc. with DIN 57883, June 1980 2) Static air, SITAC soldered in pcb or base plate. 3) The SITAC switch is soldered in pcb or base plate. 4) Thermocouple measurement has to be performed potentially separated to A1 and A2. The measuring junction should be as near as possible at the case. Semiconductor Group 4 12.96 BRT 11, BRT 12, BRT 13 Characteristics at Tj = 25 °C, unless otherwise specified. Tj Typical input characteristics IF = ƒ(V F) Typical output characteristics IT = ƒ(V T) Current reduction ITRMS = ƒ(TA) RthJA = 125 K/W 3) Current reduction I TRMS = ƒ(TPIN5) RthJ-PIN5 = 16,5 K/W 4) Semiconductor Group 5 12.96 BRT 11, BRT 12, BRT 13 Typical trigger delay time tgd = f(IF/IFT25°C) V D = 200V Power dissipation for 40 ... 60 Hz line operation Ptot = ƒ(ITRMS) Typical off-state current I D = f(Tj) V D = 800V Pulse trigger current IFTN = f(tpIF ) IFTN normalized to IFT refering to tpIF ≥ 1 ms V op = 220 V, f= 40 ... 60 Hz typ. Semiconductor Group 6 12.96