CGY121B

CGY 121 B GaAs MMIC Preliminary Data l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communication Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz 3 2 1 Vd2; RF-out RF-GND Vd1 ESD: Electrostatic discharge sensitive device, observe handling precautions! * ) Type Marking Ordering code (taped) Package1) CGY 121 B Y0S Q62702-G0071 MW-6 Maximum ratings Characteristics Drain voltage Neg. supply voltage Pos. control voltage Channel temperature Storage temperature range Total power dissipation (TS < 81°C) 2) Thermal resistance Characteristics Channel-soldering point (GND) 1) 2) Symbol Unit 8 -8 4 150 -55...+150 550 V V V °C °C mW VD VG Vcon TCh Tstg Ptot Symbol Unit 125 K/W RthChS Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! ) * Pin-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # 1 2 3 4 5 6 VD2 / Pout RF-Gnd VD1 VG / Pin RF-Gnd Configuration Drain voltage 2nd stage / RF-0utput Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input Vcontrol Positive voltage for gain control (0V....3V) Siemens Aktiengesellschaft 2 Semiconductor Group 2 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Electrical characteristics (TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Power Gain Vd=5V; I=70mA; Vcon=3V Input return loss Vd=5V; I=70mA; Vcon=3V Output return loss Vd=5V; I=70mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=5V; I=70mA 1dB gain compression Vd=5V; I=70mA; Vcon=3V Symbol min typ 21.5 15 11 55 16 max Unit dB dB dB dB dBm G RLin RLout dG P1dB Electrical characteristics (TA = 25°C, f = 1800 MHz, Vg=-4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Power Gain Vd=5V; I=70mA; Vcon=3V Input return loss Vd=5V; I=70mA; Vcon=3V Output return loss Vd=5V; I=70mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=5V; I=70mA 1dB gain compression Vd=5V; I=70mA; Vcon=3V DC characteristics Characteristics Gate current (Pin 4) Vg=-4V Control current (Pin 6) Vg=-4V; Vcon=0V...3V Supply current Vg = -4V; Vcon = 3V Siemens Aktiengesellschaft Symbol min - typ 19.5 10 8 55 16 max - Unit dB dB dB dB dBm G RLin RLout dG P1dB Symbol Ig Ic Id min - typ 1.0 0.5 70 max - Unit mA mA mA 3 Semiconductor Group 3 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Gain vs. Vcontrol and temperature Operating Conditions : Vd=3V, Vg=-4V, Id=70mA, f=900MHz, Pin=-10dBm 30 20 10 Gain [dB] 0 -10 -20°C 25°C -30 70°C -20 -40 0,0 0,5 1,0 1,5 Vcontrol [V] 2,0 2,5 3,0 Application Circuit f = 900 MHz Vd C3 R2 R3 C4 L1 3 L2 Output 1 Input 50 Ohm C1 R1 4 CGY121 6 2,5 C2 50 Ohm C5 Vg GND Vcontrol Siemens Aktiengesellschaft 4 Semiconductor Group 4 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B C1 R1 CGY 121 C3 L1 R2 C5 L2 R3 C4 C2 Parts List Frequency C1, C2 (Siemens Size 0603) C3, C4 (Siemens Size 0603) C5 (Siemens Size 0603) L1 (Coilcraft 0805CS-150XKBC) L2 (Coilcraft 0805CS-270XMBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 900 MHz 22 pF 100 nF 47 nF 15 nH 27 nH 270 Ohm 12 Ohm 6.8 Ohm 0603 0603 0603 0805 0805 0805 0805 0805 Siemens Aktiengesellschaft 5 Semiconductor Group 5 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Application Circuit f = 1900 MHz Vd C3 C6 3 R2 R3 C4 L1 Output 1 6 2,5 Input 50 Ohm C1 R1 4 CGY121 C2 50 Ohm C5 Vg GND Vcontrol Siemens Aktiengesellschaft 6 Semiconductor Group 6 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Parts List Frequency C1, C2 (Siemens size 0603) C3, C4 (Siemens size 0603) C5 (Siemens size 0603) C6 (Siemens size 0603) L1 (Coilcraft 0805CS-270XKBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 1900 MHz 12 pF 100 nF 47 nF 1.2 pF 15 nH 270 Ohm 12 Ohm 6.8 Ohm 0603 0603 0603 0603 0805 0805 0805 0805 Total Power Dissipation Ptot = f(Ts) Ptotmax in mW 700 600 Ptotmax 81°C 500 Power Dissipation in mW 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Soldering Point Temperature Ts in °C Siemens Aktiengesellschaft 7 Semiconductor Group 7 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Semiconductor Device Outline MW-6 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1997. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft 8 04.08.98 HL HF PE GaAs/HB 1998-11-01 Semiconductor Group 8