CGY196

CGY 196 GaAs MMIC Preliminary Data l l l l l l l l l Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply Operating voltage range: 2.0to 6 V Pout = 25.5dBm at Vd=2.4V Pout = 27.0dBm at Vd=3.0V Pout = 30.0dBm at Vd=5.0V Overall power added efficiency up to 50 % Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 196 t.b.d. t.b.d. SCT598 Maximum ratings Characteristics Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (Ts < 81 °C) Symbol VD max. Value 6 1.0 20 150 -55...+150 1.0 Unit V A dBm °C °C W ID Pinmax TCh Tstg Ptot PPulse Ts: Temperature at soldering point Pulse peak power Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 70 Unit K/W 2.0 W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Functional Block Diagram VD1 VD2 RFin/Vg RFout/Vd3 G ND G ND G ND Pin # 1 2 3 4 5 6 7 8 Name Configuration RF input power + Gate voltage [0V internal] RF and DC ground Pos. drain voltage of the 2nd stage not connected not connected RF and DC ground Pos. drain voltage of the 1st stage RFin/Vg GND VD2 n.c. n.c. GND VD1 RFout/VD3 RF output power / Pos. drain voltage of the 3rd stage DC characteristics Characteristics Drain current stage 1 stage 2 stage 3 Transconductance stage 1 stage 2 stage 3 Symbol Conditions VD1=3V VD2=3V VD2=3V VD=3V, ID=50mA VD=3V, ID=300mA VD=3V, ID=300mA min typ 45 65 340 110 650 650 max Unit mA mA mA mS mS mS IDSS1 IDSS2 IDSS2 gfs1 gfs2 gfs3 Siemens Aktiengesellschaft Semiconductor Group 2 2 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave / DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: • W hen RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board ( normally at the widest source or ground lead for GaAs ). Use a small sensor of low heat transport, for example a thermoelement ( < 1mm ) with thin wires or a temperature indicating paper while the device is operating. W hen RthSA is already known: TS = Pdiss x RthSA + TA • mW 1600 Permissible Total Power Dissipation in DC Operation 1400 1200 Ptot DC = f (Ts) 1000 75 800 600 400 200 0 0 25 50 75 100 125 150 Temperature of soldering point, Ts °C Siemens Aktiengesellschaft Semiconductor Group 3 3 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x ( Ptot-max / Ptot-DC ) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max / Ptot-DC from the following diagram to get a specific value. Pulse factor: Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = ” Pulse peak power ” = 2 W Siemens Aktiengesellschaft Semiconductor Group 4 4 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. Tch = (= ( Pdiss x RthChS ) + TS Temperature of soldering point, measured or calculated Channel temperature junction temperature) Power dissipated in the chip. It does not contain decoupled RFpower Rth of device from channel to soldering point Siemens Aktiengesellschaft Semiconductor Group 5 5 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Electrical characteristics [ 3.0V DECT-Application: PCB-Layout see page 9] (TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Gain VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Overall Power added Efficiency VD=3.0V; Pin = 3 dBm Supply current VD=4.8V; Pin = -10 dBm Supply current VD=4.8V; Pin = 0 dBm Gain VD=4.8V; Pin = -10 dBm Output Power VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 5 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD≤3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD≤5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase, Symbol min typ 300 450 32 26.0 45 50 450 370 32 29 45 50 40 No module damage for 10 sec. No module damage for 10 sec. All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level max Unit mA mA dB dBm % % mA mA dB dBm % % dB - IDD IDD G Po PAE PAE IDD IDD G Po PAE PAE -S21 - - - - - - - Siemens Aktiengesellschaft Semiconductor Group 6 6 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Output power and power added efficiency pulsed mode: T=417µs, duty cycle 12.5% Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] CGY196 Vd=3.3V, duty cycle 10% 27,0 26,0 25,0 24,0 23,0 22,0 21,0 20,0 19,0 18,0 17,0 -11 -10 60,0 55,0 50,0 45,0 40,0 35,0 30,0 25,0 20,0 15,0 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm Pout [dBm] PAE [%] CGY196 VD=5.0V, duty cycle 10% 30,0 29,0 28,0 27,0 26,0 25,0 24,0 23,0 22,0 21,0 20,0 -11 -10 Pout [dBm] PAE [%] 60,0 55,0 50,0 45,0 40,0 35,0 30,0 25,0 20,0 15,0 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm Siemens Aktiengesellschaft Semiconductor Group 7 7 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] S-Parameter [pulsed mode: T=417µs, duty cycle 12.5%, Pin=0dBm,Vd=3.3V] + * o o o x o o o oooo oo o o o o ** ++*** ** ++++++ ** ** *+ +++ o + +* + * +* + ** xx xxxxxx x x o x x x x x x x Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417µs, duty cycle 12.5%] CGY196 400 350 300 250 200 150 100 50 0 0,0 1,0 2,0 Vd / V 3,0 4,0 5,0 40 30 20 10 0 -10 -20 -30 -40 I(mA) Pout(dBm) Siemens Aktiengesellschaft Semiconductor Group 8 8 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] Harmonic Distortion CGY196 Vd=3.3V -30,0 -35,0 -40,0 Distortion / dBc -45,0 2f 3f -50,0 -55,0 -60,0 -65,0 -70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm Harmonic Distortion CGY196 Vd=4.8V -30,0 -35,0 -40,0 Distortion / dBc -45,0 2f 3f -50,0 -55,0 -60,0 -65,0 -70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm Siemens Aktiengesellschaft Semiconductor Group 9 9 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Test Board Layout [3.0V DECT-Application f=1.89GHz ] Siemens Aktiengesellschaft Semiconductor Group 10 10 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Electrical characteristics [2.4V DECT-Application: PCB-Layout see page 12] (TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Supply current VD=2.4V; Pin = +0 dBm Supply current VD=2.4V; Pin = -10 dBm Output Power VD=2.4V; Pin = 0 dBm Overall Power added Efficiency VD=2.4V; Pin = +0 dBm Supply current VD=2.2V; Pin = +0 dBm Supply current VD=2.2V; Pin = -10 dBm Output Power VD=2.2V; Pin = 0 dBm Overall Power added Efficiency VD=2.2V; Pin = +0 dBm Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD≤3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD≤5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase, Symbol min typ 360 450 25.7 44 350 450 25.1 42 370 450 27.0 44 34 No module damage for 10 sec. No module damage for 10 sec. All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level max Unit mA mA dBm % mA mA dBm % mA mA dBm % dB - IDD IDD Po PAE IDD IDD Po PAE IDD IDD Po PAE -S21 - - - - - - - Siemens Aktiengesellschaft Semiconductor Group 11 11 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417µs, duty cycle 12.5%] CGY196 2.4V Applikation 450 400 350 300 250 200 150 100 50 0 0,0 1,0 2,0 Vd / V 3,0 40 30 20 10 0 -10 -20 -30 -40 -50 5,0 I(mA) Pout(dBm) 4,0 Siemens Aktiengesellschaft Semiconductor Group 12 12 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Test Board Layout [2.4V DECT-Application f=1.89GHz ] Siemens Aktiengesellschaft Semiconductor Group 13 13 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 SIEMENS Type Package High Frequency Semiconductors File Date CGY196 GaAs MMIC Key-word SCT598 D:\Projekte\AKTUELL\EH_DB\lie ferung_pdf\Lieferung\word\cgy19 26.02.1998 Notes on Processing Preliminary soldering recommendation • • Foot Print drawing C63060-A2123-A001-01-0027 Soldering soldering profile: ramp-up preheating ramp-up peak exposure to molten solder typ. solder temperature peak temperature ramp-down wave soldering: reflow soldering: (IR or VPR) unsuitable suitable temperature gradient: time at 100 - 150 °C: temperature gradient above 183°C typ. 215-245°C max. peak 260°C temperature gradient: max. + 2 K/sec min. 90 sec. max. + 6 K/sec max. 150 sec max. 30 sec. max. 10 sec. min. - 6°C/sec (see also soldering standard profile of databook ‘package information’) comments • • slow ramp-up, long preheating phase and low max. temperature recommended 150 - 200 µm - visual inspection - cross sectioning - measurement of case temperature / thermal resistance case to ambient level 1 level 111 storage floor life at 30°C/90% unlimited storage floor life at 30°C/60% unlimited IR/Convection; max. 245°C; < 6K/sec. Solder paste thickness Control of soldering (voids) • • Jedec A-112A IPC-9501 (IPC-4202) Siemens Aktiengesellschaft Semiconductor Group 14 14 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 15 15 16.6.1998 1998-11-01 HL HF PE GaAs