LSS269

LC SOT-23 LED, Diffused Low Current LED LS S269, LY S269, LG S269 Besondere Merkmale q q q q q q eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar hohe Lichtstärke bei kleinen Strömen (typ. 2 mA) für alle SMT-Bestück- und Löttechniken geeignet gegurtet (8-mm-Filmgurt) VSO06723 Features q q q q q q colored, diffused package extrem wide-angle LED for use as optical indicator high luminous intensity at very low currents (typ. 2 mA) suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Typ Type Emissionsfarbe Color of Emission Gehäusefarbe Color of Package Lichtstärke Luminous Intensity IF = 2 mA IV (mcd) ≥ 0.16 ≥ 0.16 ≥ 0.16 Bestellnummer Ordering Code LS S269-BO LY S269-BO LG S269-BO super-red yellow green red diffused yellow diffused green diffused Q62703-Q1566 Q62703-Q1568 Q62703-Q1570 Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0. Semiconductor Group 1 1998-04-07 LS S269, LY S269, LG S269 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom Forward current Stoßstrom Surge current t ≤ 10 µs, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA ≤ 25 ˚C Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air 1) 1) 1) Symbol Symbol Werte Values – 55 … + 100 – 55 … + 100 + 100 7.5 150 Einheit Unit ˚C ˚C ˚C mA mA Top Tstg Tj IF IFM VR Ptot 5 20 V mW Rth JA 750 K/W Auf Platine gelötet: Lötfläche ≥ 16 cm2 Soldered on PC board: pad size ≥ 16 cm2 Semiconductor Group 2 1998-04-07 LS S269, LY S269, LG S269 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol LS Wellenlänge des emittierten Lichtes (typ.) λpeak Wavelength at peak emission (typ.) IF = 7.5 mA Dominantwellenlänge Dominant wavelength IF = 7.5 mA (typ.) λdom (typ.) 635 Werte Values LY 586 LG 565 nm Einheit Unit 628 590 570 nm Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ Spectral bandwidth at 50 % Irel max (typ.) IF = 7.5 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaßspannung Forward voltage IF = 2 mA Sperrstrom Reverse current VR = 5 V Kapazität Capacitance VR = 0 V, ƒ = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 µs, RL = 50 Ω 2ϕ 45 45 25 nm 140 1.8 2.6 0.01 10 3 140 2.0 2.7 0.01 10 3 140 1.9 2.6 0.01 10 12 Grad deg. V V µA µA pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf 200 150 200 150 450 200 ns ns Semiconductor Group 3 1998-04-07 LS S269, LY S269, LG S269 Relative spektrale Emission Irel = ƒ (λ), TA = 25 ˚C, IF = 7.5 mA Relative spectral emission V (λ) = spektrale Augenempfindlichkeit Standard eye response curve 100 % Ι rel 80 OHL01698 Vλ 60 pure-green green orange super-red red 20 0 400 450 500 550 yellow 40 600 650 hyper-red blue nm 700 λ Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40 30 20 10 ϕ 0 1.0 OHL01693 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 4 1998-04-07 LS S269, LY S269, LG S269 Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C 10 2 OHL01208 Relative Lichtstärke IV/IV(2 mA) = f (IF) Relative luminous intensity TA = 25 ˚C 10 1 ΙV Ι V(2mA) 10 0 OHL01207 Ι F mA 10 1 5 super-red green yellow 5 10 -1 5 green yellow super-red 10 0 5 10 -2 5 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 10 -1 5 10 0 5 10 1 mA 10 ΙF 2 Zulässige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C 10 3 OHL01278 Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) 8 OHL01193 Ι F mA tP t D= P T D = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 ΙF T ΙF mA 6 5 4 3 10 2 5 10 1 5 DC 2 1 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp 0 0 20 40 60 80 ˚C 100 TA Semiconductor Group 5 1998-04-07 LS S269, LY S269, LG S269 Wellenlänge der Strahlung λpeak = f (TA) Wavelength at peak emission IF = 7.5 mA 690 λ peak nm 650 super-red 630 610 590 570 550 yellow OHL01672 Dominantwellenlänge λdom = f (TA) Dominant wavelength IF = 7.5 mA 690 λ dom nm 650 630 610 590 570 550 yellow green super-red OHL01673 green 0 20 40 60 80 ˚C 100 TA 0 20 40 60 80 ˚C 100 TA Durchlaßspannung VF = f (TA) Forward voltage IF = 2 mA 2.4 OHL01750 Relative Lichtstärke IV/IV(25 °C) = f (TA) Relative luminous intensity IF = 2 mA 2.0 ΙV Ι V(25 ˚C) 1.6 OHL01675 VF V 2.2 2.0 yellow green 1.8 super-red 1.6 1.2 yellow green 0.8 super-red 0.4 1.4 0 20 40 60 80 ˚C 100 TA 0.0 0 20 40 60 80 ˚C 100 TA Semiconductor Group 6 1998-04-07 LS S269, LY S269, LG S269 Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 3.0 2.8 1.9 0.95 B C A 0.15 0.08 2.6 max 10˚ max 1 2 10˚ max 0.1 max 1.1 max GSO06723 3 0.5 0.35 0.25 M B C Approx. weight 0.01 g Pin configuration LS, LY, LG 1 2 Anode 3 Cathode GSO06723 Anschlußbelegung: (Draufsicht) Pin configuration: (top view) Semiconductor Group 7 0.2 M A 2˚...30˚ 1.4 1.2 1998-04-07