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MPSA93

MPSA93

  • 厂商:

    SIEMENS

  • 封装:

  • 描述:

    MPSA93 - PNP Silicon High-Voltage Transistors - Siemens Semiconductor Group

  • 数据手册
  • 价格&库存
MPSA93 数据手册
PNP Silicon High-Voltage Transistors MPSA 92 MPSA 93 q q q High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 42 MPSA 43 (NPN) 1 32 Type MPSA 92 MPSA 93 Marking MPSA 92 MPSA 93 Ordering Code 1 Q68000-A5906 Q68000-A4810 E Pin Configuration 2 B 3 C Package 1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TC = 66 ˚C 2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case 2) Symbol MPSA 92 Values MPSA 93 200 200 5 500 100 625 150 – 65 … + 150 mW ˚C mA V 300 300 Unit VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 MPSA 92 MPSA 93 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 92 MPSA 93 Collector-base breakdown voltage IC = 100 µA, IB = 0 MPSA 92 MPSA 93 Emitter-base breakdown voltage Limit Values typ. max. Unit V(BR)CE0 300 200 – – – – – – – – – – V V(BR)CB0 300 200 IE = 100 µA, IB = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 °C VCB = 160 V, TA = 150 °C Emitter-base cutoff current MPSA 92 MPSA 93 MPSA 92 MPSA 93 V(BR)EB0 ICB0 5 – – – – – – – – – 100 100 20 20 100 nA nA µA µA nA – ICER hFE – VBE = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage 1) IC = 20 mA, IC = 2 mA MPSA 92 MPSA 93 Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance 25 40 25 – – – – – – – – – V – – 0.5 0.4 0.9 VCEsat VBEsat – fT Cobo – 70 – MHz pF VCB = 20 V, f = 1 MHz MPSA 92 MPSA 93 – – – – 6 8 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 MPSA 92 MPSA 93 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) TA = 25 °C, D = 0 Operating range Ic = f(VCE0) Collector cutoff current ICB0 = f (TA) VCB = VCBmax Semiconductor Group 3 MPSA 92 MPSA 93 DC current gain hFE = f (IC) VCE = 10 V Transition frequency fT = f (IC) f = 20 MHz, IC = 20 mA, VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 4
MPSA93 价格&库存

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