OBTS141

HITFET® BTS 141 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 28 25 12 V mΩ A A 4000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation Current lim itation Overvoltage protection 1 IN ESD Overload protection Overtemperature protection Short circuit Short circuit protection protection Source 3 HIT F ET ® Semiconductor Group Page 1 13.07.1998 BTS 141 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V Symbol Value 60 32 mA no limit | IIN | ≤ 2 Unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS - 40 ... +150 - 55 ... +150 149 4000 3000 °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 12 A Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD 100 84 E 40/150/56 V VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω , ID=0,5*12A td = 400 ms, RI = 2 Ω , ID= 12A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 0.84 75 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical 2 without blown air. Semiconductor Group Page 2 13.07.1998 BTS 141 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 35 270 2500 max. 73 20 2.2 100 500 4000 V µA V µA Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 1000 Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 2,7 mA Input current - normal operation, ID 2 mA @ VIN >10V. t0 : tm : t1 : Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level wher the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. t2 : Semiconductor Group Page 5 13.07.1998 BTS 141 Maximum allowable power dissipation Ptot = f(Tc ) BTS 141 On-state resistance RON = f(Tj); ID=12A; VIN=10V 140 W 60 120 Ω Ptot 110 100 90 80 70 60 50 40 30 RDS(on) 40 max. 30 typ. 20 10 20 10 0 0 20 40 60 80 100 120 °C 150 150 0 -50 -25 0 25 50 75 100 °C 150 Tj On-state resistance RON = f(Tj); ID= 12A; V IN=5V 70 Typ. input threshold voltage VIN(th) = f(Tj ); ID =2,7A; VDS=12V 2.0 V Ω 1.6 RDS(on) 50 VIN(th) max. typ. 1.4 1.2 1.0 0.8 0.6 0.4 40 30 20 10 0.2 0 -50 -25 0 25 50 75 100 °C 150 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Tj Page 6 Semiconductor Group 13.07.1998 BTS 141 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj=25°C 28 Typ. output characteristic ID = f(VDS); Tj=25°C Parameter: VIN 30 10V 6V 5V 4V A A ID 20 ID 20 16 15 12 10 8 Vin=3V 4 5 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 V 5 VIN VDS Transient thermal impedance Z thJC = f(tP) Parameter: D=tP/T 10 1 K/W ZthJC10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Semiconductor Group Page 7 13.07.1998 BTS 141 Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb µC V IN HITFET ∆V V IN thermal shutdown ∆V = RST *IIN(3) Semiconductor Group Page 8 13.07.1998 BTS 141 Package and ordering code all dimensions in mm Ordering code: Q67060-S6502-A3 Ordering Code: Q67060-S6502-A2 Semiconductor Group Page 9 13.07.1998 BTS 141 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group Page 10 13.07.1998