Q62702-C2372

BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package Type BC 847S Marking 1Cs Ordering Code Q62702-C2372 Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Symbol Value 45 50 50 6 100 200 250 150 - 65...+150 mW °C mA Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 BC 847S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 200 700 900 660 630 mV 250 650 700 770 V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 45 50 50 6 - IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VCEsat VBEsat - VBE(ON) 580 - 1) Pulse test: t < 300 µs; D < 2% Semiconductor Group 2 May-12-1998 BC 847S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter AC Characteristics per Transistor Transition frequency Symbol min. Values typ. 250 2 10 4.5 2 330 30 max. kΩ 10-4 µS MHz pF Unit fT Ccb Ceb h11e h12e h21e h22e - IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Semiconductor Group 3 May-12-1998 BC 847S Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 K/W 3 10 3 10 2 R thJS Ptotmax / PtotDC 10 2 D=0 0.005 0.01 0.02 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group 4 May-12-1998 BC 847S Transition frequency fT = f (IC ) Collector-base capacität CCB = f (VCBO ) Emitter-base capacität CEB = f (VEBO ) VCE = 5V Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat ), hFE = 20 Semiconductor Group 5 May-12-1998 BC 847S DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat ), hFE = 20 Semiconductor Group 6 May-12-1998