Q62702-C2597

BCP 71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage 4 5 3 2 1 VPW05980 Type BCP 71M Marking Ordering Code Pin Configuration PCs Q62702-C2597 Package 1 = E 2 = C 3 = E 4 = B 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 94 °C Junction temperature Storage temperature Symbol Value 32 32 5 3 6 200 500 1.7 150 -65...+150 W °C mA A Unit V VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤ 88 ≤ 33 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -12-1998 BCP 71M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 32 32 5 - I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 8 V, IE = 0 Collector cutoff current VCB = 8 V, IE = 0 , T A = 150 °C Emitter cutoff current VEB = 4 V, I C = 0 DC current gain 1) I C = 10 mA, VCE = 5 V I C = 500 mA, V CE = 1 V I C = 2 A, VCE = 2 V Collector-emitter saturation voltage1) 25 85 50 - 0.18 - 475 1.2 V V VCEsat VBEsat I C = 2 A, I B = 0.2 A Base-emitter saturation voltage 1) I C = 2 A, I B = 0.2 A AC Characteristics Transition frequency fT Ccb - 100 80 - MHz pF I C = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -12-1998 BCP 71M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 2000 mW 1600 1400 TS P tot 1200 1000 800 600 400 200 0 0 TA 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC K/W - RthJS 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -12-1998 BCP 71M DC current gain h FE = f (I C) Collector-emitter saturation voltage VCE = 2V 10 3 IC = f (VCEsat ), hFE = 10 10 4 mA - 100°C 25°C 10 3 hFE 10 2 -50°C 100°C 25°C -50°C 10 2 10 1 10 1 10 0 0 10 IC 10 1 10 2 10 3 mA 10 4 10 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50 IC VCEsat Base-emitter saturation voltage Collector current I C = f (VBE) I C = f (VBEsat), hFE = 10 10 4 mA VCE = 2V 10 4 mA 10 3 10 3 -50°C 25°C 100°C 10 2 IC IC 10 2 -50°C 25°C 100°C 10 1 10 1 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 10 0 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 VBEsat VBE Semiconductor Group Semiconductor Group 44 Au 1998-11-01 -12-1998