Q62702-F1055

Silicon N Channel MOSFET Tetrode q q BF 997 Integrated suppression network against spurious VHF oscillations For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type BF 997 Marking MK Ordering Code (tape and reel) Q62702-F1055 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines.. Semiconductor Group 1 07.94 BF 997 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± ± ± Values typ. max. Unit 20 8.5 8.5 – – 2 – – – – – – – – – – – 14 14 50 50 20 2.5 2.0 V V(BR) G1SS V(BR) G2SS IG1SS IG2SS nA IDSS – VG1S (p) – VG2S (p) mA V Semiconductor Group 2 BF 997 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC Characteristics Forward transconductance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Feedback capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit) Noise figure VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit) Gain control range VDS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz (test circuit) gfs Cg1ss Cg2ss Cdg1 Cdss Gps 15 – – – – – 18 2.5 1.2 25 1 25 – – – – – – fF pF dB mS pF Values typ. max. Unit F – 1 – ∆ Gps 50 – – Semiconductor Group 3 BF 997 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) VG2S = 4 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Semiconductor Group 4 BF 997 Drain current ID = f (VG1S) VDS = 15 V Gate 1 input capacitance Cg1ss = f (VG1S) VG2S = 4 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Gate 2 input capacitance C g2ss = f (VG2S) VG1S = 0 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VG1S = 0 V, VG2S = 4 V IDSS = 10 mA, f = 1 MHz Semiconductor Group 5 BF 997 Gate 1 input admittance y11s VDS = 15 V, VG2S = 4 V (common source) Gate 1 forward transfer admittance y21s VDS = 15 V, VG2S = 4 V (common source) Output admittance y22s VDS = 15 V, VG2S = 4 V (common source) Semiconductor Group 6 BF 997 Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz, (see test circuit) Test circuit for power gain and noise figure f = 200 MHz, GG = 2 mS, GL = 0.5 mS Semiconductor Group 7