Q62702-P1634

SMT Multi TOPLED® SFH 331 3.0 2.6 2.3 2.1 0.8 0.6 2 C E 1 Package marking Emission color : super-red 4 3 0.1 typ 2.1 1.7 0.9 0.7 (2.4) A 3.4 3.0 C 1.1 0.5 3.7 3.3 0.18 0.12 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type SFH 331 Bestellnummer Ordering Code Q62702-P1634 Wesentliche Merkmale q Geeignet für Vapor-Phase Löten und IR-Reflow Löten Features q Suitable for vapor-phase and IR-reflow soldering Semiconductor Group 1 1997-11-01 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Description Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stoßstrom Surge current t ≤ 10 µs, D = 0.005 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Total power dissipation Symbol Symbol LED Wert Value Transistor – 55 ... + 100 – 55 ... + 100 + 100 – 15 75 °C Einheit Unit Top Tstg Tj IF IC – 55 ... + 100 – 55 ... + 100 + 100 30 – 500 ˚C ˚C mA mA mA IFM VR VCE 5 – 100 – 35 165 V V mW Ptot Wärmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board* Rth JA 2) (Padgröße ≥ 16 mm mounting on pcb* (pad size ≥ 16 mm 2) Sperrschicht / Lötstelle Rth JS junction / soldering joint * PC-board: G30/FR4 450 450 K/W 350 – K/W Notes Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. Semiconductor Group 2 1997-11-01 SFH 331 Kennwerte LED (TA = 25 ˚C) Characteristics LED Bezeichnung Description Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlänge Dominant wavelength IF = 10 mA Symbol Symbol (typ.) λpeak (typ.) (typ.) λdom (typ.) Wert Value 635 Einheit Unit nm 628 nm Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ Spectral bandwidth at 50 % Irel max (typ.) IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaßspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazität Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 µs, RL = 50 Ω Lichtstärke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA 2ϕ 45 nm 120 2.0 2.6 0.01 10 12 Grad degr. V V µA µA pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf (typ.) IV 300 150 6 (4.0 ... 12.5) ns ns mcd Semiconductor Group 3 1997-11-01 SFH 331 Kennwerte Fototransistor (TA = 25 oC, λ = 950 nm) Characteristics Phototransistor Bezeichnung Description Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Symbol Symbol λS max λ Wert Value 860 380 ... 1150 Einheit Unit nm nm Bestrahlungsempfindliche Fläche (∅ 240 µm) A Radiant sensitive area (∅ 240 µm) Abmessung der Chipfläche Dimensions of chip area Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface Halbwinkel Half angle Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 L×B H 0.045 0.45 × 0.45 0.5 ... 0.7 mm2 mm × mm mm ϕ CCE ± 60 5.0 Grad degr. pF ICEO 1 (≤ 200) nA IPCE ≥ 16 µA tr, tf 7 µs VCEsat 150 mV Semiconductor Group 4 1997-11-01 SFH 331 LED Radiation characteristics Irel = f (ϕ) Phototransistor Directional characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ OHL01660 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 LED Relative spectral emission Irel = f (λ), TA = 25 ˚C, IF = 20 mA V (λ) = Standard eye response curve 100 % Φ rel 80 OHL02350 Vλ 60 40 20 super-red 0 400 450 500 550 600 650 λ nm 700 Semiconductor Group 5 1997-11-01 SFH 331 Forward current IF = f (VF) TA = 25 ˚C 10 2 OHL02351 Rel. luminous intensity IV / IV(10 mA) = f (IF), TA = 25 ˚C 10 1 ΙV Ι V(10mA) 10 0 OHL02316 Perm. pulse handling capability IF = f (tp) Duty cycle D = parameter, TA = 25 ˚C 10 3 OHL01686 Ι F mA ΙF mA tP D= tP T T ΙF 10 1 5 super-red 10 0 5 5 super-red D = 0.005 0.01 0.02 0.05 0.1 10 2 0.2 10 -1 5 5 10 5 -2 0.5 DC 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 10 -1 5 10 0 5 10 1 mA 10 ΙF 2 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp Max. permissible forward current IF = f (TA) ΙF 60 mA 50 OHL01661 Wavelength at peak emission λpeak = f (TA), IF = 20 mA 690 OHL02104 Dominant wavelength λdom = f (TA) IF = 20 mA 690 OHL02105 λ peak nm 650 λ dom nm 650 super-red 630 630 orange 610 610 yellow 590 570 550 orange yellow green pure-green 0 20 40 60 80 ˚C 100 super-red 40 30 20 590 10 570 550 green pure-green 0 0 20 40 60 80 ˚C 100 TA 0 20 40 60 80 ˚C 100 TA TA Forward current VF = f (TA) IF = 10 mA 2.4 OHL02106 Rel. luminous intensity IV / IV(25 ˚C) = f (TA), IF = 10 mA 2.0 ΙV Ι V (25 ˚C) 1.6 OHL02150 VF V 2.2 2.0 green super-red orange yellow 1.2 yellow green 1.8 0.8 pure-green orange super-red pure-green 1.6 0.4 1.4 0 20 40 60 80 ˚C 100 0.0 0 20 40 60 80 ˚C 100 TA TA Semiconductor Group 6 1997-11-01 SFH 331 Phototransistor Rel. spectral sensitivity Srel = f (λ) 100 OHF01121 Photocurrent IPCE = f (VCE), Ee = Parameter Ι PCE 10 0 mA OHF01529 Dark current ICEO = f (VCE), E = 0 Ι CEO 10 1 nA OHF01527 S rel % 80 mW 12 cm 0.5 mW cm 2 mW cm 2 10 0 60 10 -1 0.25 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 λ 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Total power dissipation Ptot = f (TA) 200 mW OHF00871 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 5.0 OHF01528 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Ι PCE 25 1.4 1.2 Ι PCE 1.6 OHF01524 C CE pF 4.0 3.5 P tot 160 120 3.0 2.5 1.0 0.8 0.6 0.4 80 2.0 1.5 40 1.0 0.5 0.2 0 -25 0 0 20 40 60 80 ˚C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 25 50 75 C 100 TA Dark current ICEO = f (TA), VCE = 5 V, E = 0 Ι CEO 10 3 nA OHF01530 Photocurrent IPCE = f (Ee), VCE = 5 V 10 3 µA OHF01924 Ι PCE 10 2 10 2 10 1 10 1 4 3 2 10 0 10 0 10 -1 -25 0 25 50 75 ˚C 100 TA 10 -1 -3 10 10 -2 mW/cm 2 10 0 Ee Semiconductor Group 7 1997-11-01