Q62702-P1826

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS (E9087) feo06075 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen bei 950 nm q kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 FS/(E9087); geeignet für Vapor-Phase Löten und IR-Reflow Löten Anwendungen q IR-Fernsteuerung von Fernseh- und 1.8 1.4 Approx. weight 0.1 g Features q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment q Photointerrupters Rundfunkgeräten, Videorecordern, Gerätefernsteuerungen q Lichtschranken für Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 ±0.2 0.9 0.7 4.0 3.7 1.7 1.5 0...5 ˚ BPW 34 FS Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 ±0.2 0.9 0.7 1.7 1.5 0...5 ˚ 4.0 3.7 BPW 34 FAS (E9087) Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type BPW 34 F BPW 34 FS BPW 34 FS (E9087) Bestellnummer Ordering Code Q62702-P929 Q62702-P1604 Q62702-P1826 Semiconductor Group 2 1998-08-27 feo06916 feo06861 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 ... + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage Symbol Symbol Wert Value 50 (≥ 40) Einheit Unit µA S λS max λ 950 780 ... 1100 nm nm A L×B L×W ϕ 7.00 2.65 × 2.65 mm2 mm × mm ± 60 2 (≤ 30) 0.59 0.77 330 (≥ 275) Grad deg. nA A/W Electrons Photon mV IR Sλ η VO Semiconductor Group 3 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics (cont’d) Bezeichnung Description Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V Nachweisgrenze, VR = 10 V Detection limit Symbol Symbol Wert Value 25 20 Einheit Unit µA ns ISC tr, tf VF C0 TCV TCI NEP 1.3 72 – 2.6 0.18 4.3 × 10– 14 V pF mV/K %/K W √Hz cm · √Hz W D* 6.2 × 1012 Semiconductor Group 4 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Relative spectral sensitivity Srel = f (λ) 100 OHF00368 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) ΙP Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00958 S rel % 80 µA 10 3 OHF01097 10 2 10 3 VO 60 10 1 40 10 0 20 10 2 80 60 ΙP 10 1 40 20 0 700 800 900 1000 nm λ 1200 10 -1 0 10 10 1 10 2 µW/cm 2 Ee 10 10 4 0 0 0 20 40 60 80 ˚C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 ΙR pA C pF 80 Ι R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 ˚C 100 TA Directional characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1998-08-27