BSS 284
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-1.6 V
Pin 1 G
Pin 2 S
Pin 3 D
Type BSS 284 Type BSS 284
VDS
-50 V
ID
-0.13 A
RDS(on)
10 Ω
Package SOT-23
Marking SDs
Ordering Code Q62702-S299
Tape and Reel Information E6327
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Continuous drain current
VGS ID
± 20 A -0.13
TA = 30 °C
DC drain current, pulsed
IDpuls
-0.52
TA = 25 °C
Power dissipation
Ptot
0.36
W
TA = 25 °C
Semiconductor Group
1
18/02/1997
BSS 284
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Symbol
Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56
Unit °C K/W
Tj Tstg RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-50 -1.2 -0.1 -2 -1 5 -1.6
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -60 -0.1
µA
VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
-10
nA Ω 10
VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = -10 V, ID = -0.13 A
Semiconductor Group
2
18/02/1997
BSS 284
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.05 0.08 30 17 8 -
S pF 40 25 12 ns 7 10
VDS≥ 2 * ID * RDS(on)max, ID = -0.13 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω
Rise time
tr
12 18
VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω
Turn-off delay time
td(off)
10 13
VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω
Fall time
tf
20 27
VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω
Semiconductor Group
3
18/02/1997
BSS 284
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A -0.9 -0.13 -0.52 V -1.2 Values typ. max. Unit
TA = 25 °C
Inverse diode direct current,pulsed
ISM
-
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = -0.26 A, Tj = 25 °C
Semiconductor Group
4
18/02/1997
BSS 284
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V
-0.14 A -0.12
0.40 W
Ptot
0.32 0.28 0.24
ID
-0.11 -0.10 -0.09 -0.08
0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160
-0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
-60 V -58
V(BR)DSS-57
-56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
18/02/1997
BSS 284
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
-0.30 A -0.26
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
32
Ptot = 0W
k l j i h
VGS [V] a -2.0
b -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
Ω
RDS (on)
24
a
b
c
d
e
ID
-0.24 -0.22 -0.20 -0.18 -0.16 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02 0.00 0.0 -1.0 -2.0 -3.0
c e g
c d e f
20
fg
h i j k
16
12
f
dl
8
h ji g
4 VGS [V] =
b a
a b c d e f -2.5 -2.0 -3.5 -4.0 -4.5 -5.0 -6.0 -3.0 g h i j -7.0 -8.0 -9.0 -10.0
0 V -5.5 0.00 -0.04 -0.08 -0.12 -0.16 A -0.24
-4.0
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max
-0.9 A
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
0.16
S
ID
-0.7 -0.6
gfs
0.12
0.10 -0.5 0.08 -0.4 0.06 -0.3 -0.2 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.04
0.02 0.00 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6
VGS
A ID
-0.8
Semiconductor Group
6
18/02/1997
BSS 284
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.13 A, VGS = -10 V
26
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA
-2.6 V -2.2
Ω
22
RDS (on)
20 18 16 14
VGS(th)
-2.0 -1.8 -1.6 -1.4
98%
98%
12 10 8 6 4 2 0 -60 -20 20 60 100 °C 160 -1.2 -1.0 -0.8
typ
2%
typ
-0.6 -0.4 -0.2 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
-10 0
pF C 10 2
A
IF
-10 -1
Ciss Coss
10 1 -10 -2
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 0 0
-5
-10
-15
-20
-25
-30
V VDS
-40
-10 -3 0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
VSD
Semiconductor Group
7
18/02/1997
