Q62702-S517

BSS 98 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...1.6 V Pin 1 S Type BSS 98 Type BSS 98 BSS 98 BSS 98 Pin 2 G Marking SS98 Pin 3 D VDS 50 V ID 0.3 A RDS(on) 3.5 Ω Package TO-92 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.3 TA = 25 °C DC drain current, pulsed IDpuls 1.2 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 98 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 50 1.2 0.05 10 1.8 2.8 1.6 0.5 5 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 3.5 6 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C VDS = 30 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A Semiconductor Group 2 12/05/1997 BSS 98 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.12 0.23 40 15 5 - S pF 55 25 8 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Rise time tr 6 9 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Turn-off delay time td(off) 12 16 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 98 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1 0.3 1.2 V 1.4 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.6 A Semiconductor Group 4 12/05/1997 BSS 98 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.32 0.70 W 0.60 A Ptot 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 ID 0.24 0.20 0.16 0.12 0.08 0.15 0.10 0.05 0.00 0 0.04 0.00 0 20 40 60 80 100 120 °C 160 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 98 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.70 A 0.60 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 11 Ptot = 1W lk i h j g VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 Ω RDS (on) 9 8 7 6 5 4 3 2 b ab c d e f ID 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 c e f c d e f g h di j k l g h i kl j 0.15 0.10 0.05 a 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS [V] = 1 V 5.0 0 0.00 a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0.65 A 0.55 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.30 S 0.26 ID 0.50 0.45 gfs 0.24 0.22 0.20 0.40 0.35 0.30 0.25 0.20 0.15 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 V VGS 10 0.04 0.02 0.00 0.00 0.10 0.20 0.30 0.40 A ID 0.55 Semiconductor Group 6 12/05/1997 BSS 98 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.3 A, VGS = 10 V 9 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 2.6 V 2.2 Ω RDS (on) 7 6 5 VGS(th) 2.0 1.8 1.6 1.4 98% 98% 4 3 1.2 1.0 0.8 typ 2% typ 2 1 0.2 0 -60 -20 20 60 100 °C 160 0.0 -60 -20 20 60 100 °C 160 0.6 0.4 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 1 pF C 10 2 A IF 10 0 Ciss 10 1 Coss 10 - 1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997