Q62702-S600

SIPMOS® Small-Signal Transistor BSS 229 q q q q q q q VDS 250 V ID 0.07 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S SS229 TO-92 BSS 229 Q62702-S600 E6296: 1500 pcs/reel; 2 reels/carton; source first Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 25 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 250 250 ± 14 ± 20 0.07 0.21 0.63 – 55 … + 150 ≤ 200 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 04.97 BSS 229 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.014 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.07 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.15 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.15 A Values typ. max. Unit V(BR)DSS 250 – − 1.4 – − 0.7 V VGS(th) IDSS − 1.8 – – – – 10 75 100 200 100 nA µA nA IGSS – RDS(on) – 100 Ω gfs 0.05 0.10 85 6 2 4 10 10 15 – S pF – 120 10 3 6 15 13 20 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – Semiconductor Group 2 BSS 229 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Reverse Diode Continuous reverse drain current TA = 25 ˚C Pulsed reverse drain current TA = 25 ˚C Diode forward on-voltage IF = 0.14 A, VGS = 0 Symbol min. Values typ. max. A – – – 0.8 Unit V V V V V V V 0.07 0.21 V – Symbol Limit Values min. Range of VGS(th) Threshold voltage selected in groups: F G A B C D 1) Unit IS ISM – VSD 1.2 VGS(th) Grouping Test Condition – max. 0.15 – 1.385 – 1.485 – 1.585 – 1.685 – 1.785 – 1.885 ∆VGS(th) VGS(th) – – 1.535 – 1.635 – 1.735 – 1.835 – 1.935 – 2.035 VDS1 = 0.2 V; VDS2 = 3 V; ID = 10 µA 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Semiconductor Group 3 BSS 229 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSS 229 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.014 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSS 229 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) Semiconductor Group 6