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Q62702A1180

Q62702A1180

  • 厂商:

    SIEMENS

  • 封装:

  • 描述:

    Q62702A1180 - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrie...

  • 详情介绍
  • 数据手册
  • 价格&库存
Q62702A1180 数据手册
HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device, observe handling precautions! T BAT 15 T1 Type BAT 15-013 (ql) Marking Ordering Code see below Pin Configuration Package T BAT 15-014 (ql) BAT 15-033 (ql) BAT 15-034 (ql) BAT 15-043 (ql) BAT 15-044 (ql) BAT 15-063 (ql) BAT 15-064 (ql) BAT 15-073 (ql) BAT 15-074 (ql) BAT 15-093 (ql) BAT 15-094 (ql) BAT 15-103 (ql) BAT 15-104 (ql) BAT 15-113 (ql) BAT 15-114 (ql) BAT 15-123 (ql) BAT 15-124 (ql) (ql) Quality Level: - see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 Ordering Code: Q62702A1178 Ordering Code: on request Ordering Code: on request Ordering Code: Q62702A1180 T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1 P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, (see Chapter Order Instructions for ordering example) Semiconductor Group 1 Draft A03 1998-04-01 BAT 15 Table 1 Parameter Maximum Ratings Symbol Limit Values 3 100 100 50 50 50 Unit V mA Reverse voltage Forward current BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Power dissipation BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Operating temperature range Storage temperature range Soldering temperature Burn-out energy 1) BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 1) VR IF Ptot 100 100 50 50 50 mW Top Tstg Tsol EB - 55 to + 150 - 65 to + 175 + 220 5.0 5.0 2.0 2.0 1.0 °C °C °C Erg Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General criterion for burn-out energy is a 3 dB increase in noise figure. Semiconductor Group 2 Draft A03 1998-04-01 BAT 15 Electrical Characteristics Table 2 Parameter Breakdown voltage IR = 10 mA Reverse current DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. V mA 5 5 5 1 1 V 0.15 0.17 0.18 0.19 0.20 V 0.23 0.27 0.29 0.30 0.31 0.28 0.30 0.31 0.32 0.33 3 Unit V(BR) IR VR = 2 V BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 1 IF1 = 0.01 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 2 IF2 = 1 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 VF1 VF2 Semiconductor Group 3 Draft A03 1998-04-01 BAT 15 Table 2 Parameter DC Characteristics at TA = 25 °C unless otherwise specified (contÕd) Symbol min. 2) Limit Values typ. max. Unit W Series resistance IF1 = 10 mA, IF2 = 50 mA BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124 2) RF 3.0 4.0 3.5 4.5 4.5 5.5 6.0 7.0 8.0 3.5 4.5 4.0 5.0 5.5 6.5 7.0 8.0 9.0 DV F R F = ------------------------ W Ð3 40 ´ 10 Semiconductor Group 4 Draft A03 1998-04-01 BAT 15 Table 3 Parameter AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. pF NF 0.35 0.30 0.27 0.23 0.20 0.60 0.35 0.30 0.25 0.22 dB Unit Total capacitance VR = 0 V, f = 1 MHz BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Noise figure I.F. = 30 MHz LO power = 0 dBm LO = 9.375 GHz BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124 CT - 5.3 6.3 5.3 6.3 5.3 6.3 5.7 7.2 8.0 5.5 6.5 5.5 6.5 5.5 6.5 6.0 7.5 9.0 Semiconductor Group 5 Draft A03 1998-04-01 BAT 15 Order Instructions Full type variant including type variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BAT15- (x) (ql) (x): Type Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702A1180 BAT15-014 ES For BAT15-014 in T1 Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 6 Draft A03 1998-04-01 BAT 15 Figure 1 Symbol T Package Millimetre min. max. 1.45 1.35 0.40 1.30 1.15 - A B C Semiconductor Group 7 Draft A03 1998-04-01 BAT 15 Figure 2 Symbol T1 Package Millimetre min. max. 1.45 1.35 0.40 0.50 0.30 0.10 0.60 1.30 1.15 0.10 0.06 5.50 0.40 A B C D E F G H Semiconductor Group 8 Draft A03 1998-04-01
Q62702A1180
1. 物料型号: - BAT 15系列包含多个型号,例如BAT 15-013, BAT 15-014, BAT 15-033, BAT 15-034等,每个型号都有对应的质量等级标识(P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality)。

2. 器件简介: - BAT 15系列是高可靠性的肖特基二极管,适用于检测器和混频器应用,采用密封微波封装,符合ESA/SCC详细规范5106/014,并且是静电放电敏感器件,需要小心处理。

3. 引脚分配: - 文档提供了不同型号的引脚配置图,例如BAT15-013型号的引脚配置为1和2。

4. 参数特性: - 最大额定值包括反向电压(VR)为3V,不同型号的正向电流(IF)不同,功率耗散(Ptot)从50mW到100mW不等,工作温度范围为-55到+150℃,存储温度范围为-65到+175℃,焊接温度为+220℃,烧毁能量(EB con)根据不同型号从1.0到5.0埃各不相同。

5. 功能详解: - 包括直流特性和交流特性。直流特性包括击穿电压(V(BR))和正向电压(VF),交流特性包括总电容(CT)和噪声系数(NF)。

6. 应用信息: - 适用于微波频率范围内的检测和混频应用,具体应用需参考Siemens的半导体产品网页。

7. 封装信息: - 提供了T和T1两种封装的详细尺寸图,包括各个尺寸的最小值和最大值。
Q62702A1180 价格&库存

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