Q62702G74

CGY 191 GaAs MMIC l l l l l Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 191 CGY 191 Q62702G74 MW 16 Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation Total power dissipation (Ts ≤ 80 °C) Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A °C °C W W ID TCh Tstg PPulse Ptot Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 11 Unit K/W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Functional Block Diagram: Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 n. c. n. c. Vcon Vneg n. c. RF IN n. c. VD 1 n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage RF out / drain voltage final stage Drain voltage preamplifier stage RF IN PCS Band Control voltage Negative voltage Configuration Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Electrical Characteristics (TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified ) Characteristics Frequency range Duty cycle TDMA output power TDMA gain at max. output CDMA output power CDMA gain at max. output Power ramping characteristic Full output power Pinch off Symbol min 1850 typ max 1910 100 Unit MHz % dBm dB dBm dB V f tON/tOFF P G P G Vcontr 29 24 29 24 2.5 0.5 Adjacent Channel Power CDMA 1.25 MHz offset (PCS band) 1.98 MHz offset Padj/Pmain -45 -54 Padj/Pmain -28 -45 -45 PAE 40 PAE 40 4 dBc @ 30kHz Adjacent channel power TDMA adjacent alternate 2nd alternate TDMA DC to RF efficiency @Padj=-26dBc at max. output CDMA DC to RF efficiency @Padj=-42dBc at max. output at 10 dBm output power dBc @ 30kHz % % Receive band noise power density ( 1930 to 1990 MHz ) PRX -145 dBm/Hz DC supply voltage range Negative supply voltage range Standby current @Vcon=0V Siemens Aktiengesellschaft Semiconductor Group VD Vneg Ipwr dwn 3 3 2.9 -5.0 3.5 4.0 -7.0 V V µA 500 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Characteristics Quiescent current Current consumption at VContr Current consumption at VNEG Operating temperature range Symbol min typ 300 max Unit mA mA mA IControl INEG υ -30 2 2 +85 °C Power on sequence: 1. 2. 3. 4. connect negative voltage to PA connect control voltage to PA turn on Vd turn on Pin To switch off the device please use reverse sequence. Application Circuit: IC1 1 2 3 4 5 6 7 8 NC1 NC2 Vcon Vneg NC5 RFin NC7 VD1 NC16 NC15 VD2/RFout4 VD2/RFout3 VD2/RFout2 VD2/RFout1 NC10 NC9 Vcon C10 RFin 100p C1 L3 3p9 HQ GND (backside MW16) 33 nH 17 10n Vd CGY191 100p 1u0 1u0 1u0 C5 C4 C6 C7 Vaux C12 33n 3k9 R1 10 uH L1 C14 3 1 BAS 40-04 2 V1 C13 CLK 1n0 V2 1n0 BC848B Siemens Aktiengesellschaft Semiconductor Group 680R R2 1u0 C3 C15 33n 4 4 33 nH 16 15 14 13 12 11 10 9 C11 10n C9 RFout 100p C8 L2 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Evaluation Board: CLK Vaux C12 Vcon CLK V2 Vaux V1 L1 C15 C14 R2 C13 Vcon R1 RFout C11 C1 RFin RFin C10 PCS Band PA C6 C5 C3 C4 Vd Vd Evaluation Board Parts List: Part Type Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Inductor Air Coil Inductor Resistor Resistor Diode Transistor Substrate Position C1, C11 C7, C9, C10 C8 C3, C4, C5, C6 C12, C15 C13, C14 L1 L2 L3 R1 R2 V1 V2 Description 10nF 0402 100pF 0402 3,9pF 0603 High Q 1uF 1206 33nF 0402 1nF 0402 10uH 33nH Manufacturer Siemens Siemens AVX Part Number SIEMENS CGY191 L2 L3 C7 C8 IC1 C9 06035J3R9BBT Siemens Siemens Siemens Siemens Horst David GmbH 33nH 0603 Toko 3,9k Siemens 680 Ohm Siemens BAS40-04W Siemens BC848B Siemens FR4, h=0.2mm,εr=4.5 Siemens 5 5 PN/BV 1250 Siemens Aktiengesellschaft Semiconductor Group 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo RFout CGY 191 Typical Performance in CDMA Operation Mode: CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 -10 Pout [dBm] PAE [%] Id [mA] 800 700 600 500 400 300 200 100 0 -8 -6 -4 -2 0 2 4 6 8 Pin [dBm] Id [mA] ACPR [dBc] 80 70 60 50 40 30 20 10 0 14 CDMA Mode: ACPR & TG vs. Pout V d=3,5V, Iq=250m A, f=1880 MHz, T=25°C 26 25 24 TG [dB] 1910 1910 23 22 ACP1,25 [dBc] ACP1,98 [dBc] TG [dB] 21 20 19 18 16 18 20 22 Pout [dBm] 24 26 28 30 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 CDMA Mode: Gain vs. f Vd=3,0V, Pout=28dBm, Iq=250m A 25 24 23 22 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 30 1850 PAE [%] TG [dB] 21 40 38 36 34 32 42 CDMA Mode: PAE vs. f Vd=3,0V, Pout=28dBm , Iq=250mA 1860 1870 1880 f [MHz] 1890 1900 Siemens Aktiengesellschaft Semiconductor Group 6 6 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 24 23 22 CDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 40 39 38 37 PAE [%] 36 35 34 33 32 31 30 1850 TG [dB] 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: ACPR @1,25MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 50 49 48 47 ACPR [dBc] 46 45 44 43 42 41 40 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 60 59 58 57 56 55 54 53 52 51 50 1850 CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group 7 7 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 CDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 24 23 22 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 CDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 40 39 38 37 PAE [%] 36 35 34 33 32 31 30 1850 1860 1870 1880 f [MHz] 1890 1900 1910 Typical Performance in TDMA Operation Mode: TG [dB] TDMA Mode: Pout, PAE & Id vs. Pin V d=3,5V, Iq=250mA, f=1880 MHz, T=25°C 70 40 35 Pout [dBm], PAE [% ] 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 Pout [dBm] PAE [%] Id [mA] 4 6 8 800 700 600 ACPR [dBc] Id [mA] 500 400 300 200 100 0 Pin [dBm] 50 40 30 20 10 0 14 60 TDMA Mode: ACPR & TG vs. Pout V d=3,5V, Iq=250m A, f=1880 MHz, T=25°C 25 24 23 22 21 Padj [dBc] Palt [dBc] TG [dB] 18 16 18 20 22 Pout [dBm] 24 26 28 30 20 19 TG [dB] 1910 TDMA Mode: Padj vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 35 34 33 32 ACPR [dBc] 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=3,0V, Pout=28dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 Siemens Aktiengesellschaft Semiconductor Group 8 8 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 TDMA Mode: Gain vs. f Vd=3V, Pout=28dBm, Iq=250mA 25 24 23 22 TG [dB 21 ] 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: PAE vs. f Vd=3V, Pout=28dBm , Iq=250m A 45 44 43 42 PAE [%] 41 40 39 38 37 36 35 1850 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: Padj vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 35 34 33 32 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: Gain vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 25 24 23 22 21 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: PAE vs. f Vd=3,5V, Pout=29dBm , Iq=250m A 45 44 43 42 PAE [%] 41 40 39 38 37 36 35 1850 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group TG [dB] 9 9 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 TDMA Mode: Padj vs. f Vd=4V, Pout=30dBm , Iq=250m A 35 34 33 32 ACPR [dBc] 31 30 29 28 27 26 25 1850 1860 1870 1880 f [MHz] 1890 1900 1910 ACPR [dBc] 55 54 53 52 51 50 49 48 47 46 45 1850 TDMA Mode: Palt vs. f Vd=4V, Pout=30dBm , Iq=250m A 1860 1870 1880 f [MHz] 1890 1900 1910 TDMA Mode: Gain vs. f Vd=4V, Pout=30dBm , Iq=250m A 25 24 23 22 TG [dB] 20 19 18 17 16 15 1850 1860 1870 1880 f [MHz] 1890 1900 1910 PAE [%] 43 42 41 40 39 38 37 36 35 34 33 1850 TDMA Mode: PAE vs. f Vd=4V, Pout=30dBm , Iq=250m A 21 1860 1870 1880 f [MHz] 1890 1900 1910 Siemens Aktiengesellschaft Semiconductor Group 10 10 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo CGY 191 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 11 11 23.07.1998 HL HF PE 1998-11-01 GaAs 1/Fo