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Q62703-Q2845

Q62703-Q2845

  • 厂商:

    SIEMENS

  • 封装:

  • 描述:

    Q62703-Q2845 - SIDELED - Siemens Semiconductor Group

  • 数据手册
  • 价格&库存
Q62703-Q2845 数据手册
SIDELED® LS A670, LO A670, LY A670 LG A670, LP A670 Besondere Merkmale q q q q q q Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Reflow-Löttechniken geeignet gegurtet (12-mm-Filmgurt) Störimpulsfest nach DIN 40839 VPL06880 Features q q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsfläche Color of the Light Emitting Area colorless clear Lichtstärke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA IV (mcd) 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 2.5 4.0 6.3 10.0 4.0 1.0 1.6 2.5 4.0 1.6 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 20.0 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 12.5 8.0 12.5 20.0 32.0 Luminous Flux IF = 10 mA ΦV (mlm) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 18 (typ.) 30 (typ.) 45 (typ.) 8 (typ.) 12 (typ.) 18 (typ.) - Ordering Code LS A670-HL LS A670-J LS A670-K LS A670-L LS A670-JM LO A670-HK LO A670-J LO A670-K LO A670-L LO A670-JM LY A670-HK LY A670-J LY A670-K LY A670-L LY A670-JM LG A670-HK LG A670-J LG A670-K LG A670-L LG A670-JM LP A670-FJ LP A670-G LP A670-H LP A670-J LP A670-GK super-red Q62703-Q3908 Q62703-Q2833 Q62703-Q2834 Q62703-Q3840 Q62703-Q2835 Q62703-Q2547 Q62703-Q2837 Q62703-Q3204 Q62703-Q2836 Q62703-Q2838 Q62703-Q2552 Q62703-Q2839 Q62703-Q2840 Q62703-Q3920 Q62703-Q2841 Q62703-Q2543 Q62703-Q2842 Q62703-Q2843 Q62703-Q3192 Q62703-Q2844 Q62703-Q2549 Q62703-Q2845 Q62703-Q2846 Q62703-Q3214 Q62703-Q2847 orange colorless clear yellow colorless clear green colorless clear pure green colorless clear ... 8.0 ... 3.2 ... 5.0 ... 8.0 ... 12.5 Streuung der Lichtstärke in einer Verpackungseinheit IV min/ IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0. Semiconductor Group 2 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlaßstrom Forward current Stoßstrom Surge current t ≤ 10 µs, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße je ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2each) *) PC-board: FR4 Symbol Symbol Werte Values – 55 ... + 100 – 55 ... + 100 + 100 30 0.5 Einheit Unit ˚C ˚C ˚C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5 100 430 V mW K/W Semiconductor Group 3 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlänge Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaßspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazität Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 µs, RL = 50 Ω (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit λpeak λdom 628 605 590 570 560 nm ∆λ 45 40 45 25 22 nm 2ϕ 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 Grad deg. V V VF VF IR IR C0 0.01 0.01 0.01 0.01 0.01 µA 10 10 10 10 10 µA 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA Relative spectral emission V(λ) = spektrale Augenempfindlichkeit Standard eye response curve 100 % Ι rel 80 OHL01698 Vλ 60 red pure-green green orange 20 0 400 blue 450 500 550 yellow 40 600 super-red 650 hyper-red nm 700 λ Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40˚ 30˚ 20˚ 10˚ 0˚ OHL01660 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 Semiconductor Group 5 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C 10 2 OHL02145 Relative Lichtstärke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 ˚C 10 1 ΙV Ι V (10 mA) 10 0 OHL02146 Ι F mA 10 1 5 5 10 -1 5 pure-green 10 0 5 super-red orange/yellow green 1.4 1.8 2.2 2.6 3.0 V 3.4 10 -2 5 green red yellow super-red orange pure-green -1 10 -1 1.0 10 -3 10 5 10 0 5 10 1 mA 10 2 VF ΙF Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C 10 3 OHL01686 Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) 60 mA 50 OHL01661 ΙF mA tP D= tP T T ΙF ΙF D = 0.005 0.01 0.02 0.05 0.1 10 2 0.2 40 30 5 0.5 DC 20 10 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp 0 0 20 40 60 80 ˚C 100 TA Semiconductor Group 6 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Wellenlänge der Strahlung λpeak = f (TA) Wavelength at peak emission IF = 10 mA 690 OHL02104 Dominantwellenlänge λdom = f (TA) Dominant wavelength IF = 10 mA 690 OHL02105 λ peak nm 650 super-red 630 orange 610 590 570 550 yellow λ dom nm 650 630 610 590 570 550 super-red orange yellow green pure-green 0 20 40 60 80 ˚C 100 green pure-green 0 20 40 60 80 ˚C 100 TA TA Durchlaßspannung VF = f (TA) Forward voltage IF = 10 mA 2.4 OHL02106 Relative Lichtstärke IV / IV(25 ˚C ) = f (TA) Relative luminous intensity IF = 10 mA 2.0 ΙV Ι V (25 ˚C) 1.6 OHL02150 VF V 2.2 2.0 green super-red orange yellow 1.2 yellow green 1.8 0.8 pure-green orange super-red pure-green 1.6 0.4 1.4 0 20 40 60 80 ˚C 100 0.0 0 20 40 60 80 ˚C 100 TA TA Semiconductor Group 7 1998-11-12 LS A670, LO A670, LY A670 LG A670, LP A670 Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) (2.4) 2.8 2.4 4.2 3.8 0.7 Cathode Cathode marking 2.54 spacing (1.4) 1.1 0.9 Anode (0.3) (2.85) (2.9) (R1) 3.8 3.4 4.2 3.8 Kathodenkennung: Cathode mark: abgeschrägte Ecke bevelled edge Semiconductor Group 8 1998-11-12 GPL06880
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