Q67000-A9101

4-A DC Motor Driver TLE 4203 Overview Features • • • • • Integrated free-wheeling diodes Outputs short-circuit proof to VS and ground Thermal overload protection Blocking of the output stages upon undervoltage Final push-pull stage free of cross-over Bipolar IC P-TO220-7-1 P-TO220-7-2 Type TLE 4203 TLE 4203 S Description The integrated circuit TLE 4203 is a versatile double power driver of up to 4 A output current which is particularly suitable as a driver for DC motors in reversible operation. The push-pull power output stages operate in the switching mode and can be combined to a full-bridge configuration. The drive of the input stage is implemented using digital logic. The device contains a temperature protection logic, output stages protected against short-circuit and integrated free-wheeling diodes. Typical applications are for follow-up control, servo drives, servo motors, drive mechanisms, etc. Ordering Code Q67000-A8121 Q67000-A9101 Package P-TO220-7-1 P-TO220-7-2 Semiconductor Group 1 1998-02-01 TLE 4203 . 1 2 345 6 7 VS1 GND VS2 Q2 IST2 IST1 Q1 AEP00618 Figure 1 Pin Configuration (top view) Pin Definition and Functions Pin No. 1 2 3 Symbol IST1 Function Control input for channel 1 (TTL/CMOS-compatible), of non-inverting effect on the channel output. Channel 1 supply voltage; externally connected with the supply voltage pin for channel 2 (pin 6). Short-circuit protected push-pull C output channel 1 for currents up to 6 A. Free-wheeling diodes are integrated on chip for inductive loads. Ground; track should be designed for the max. short-circuit current (2 x 6 A). Short-circuit protected push-pull C output channel 2 for currents up to 6 A. Free-wheeling diodes are integrated on chip for inductive loads. Channel 2 supply voltage; externally connected with the supply voltage pin for channel 1 (pin 2). Control input for channel 2 (TTL/CMOS-compatible), of non-inverting effect on the channel output. VS1 Q1 4 5 GND 1, 2 Q2 6 7 VS2 IST2 Semiconductor Group 2 1998-02-01 TLE 4203 Supply Voltage VS 6 2 Protection Circuit 1 Control Input 1 1 3 Output 1 Control Input 2 7 5 Output 2 Protection Circuit 2 4 GND AEB00628 Figure 2 Block Diagram Semiconductor Group 3 1998-02-01 TLE 4203 Application In industrial and automotive electronics, power full-bridge DC motor drivers are mostly used for bidirectional motor drives. The two TTL and CMOS-compatible control inputs act on the output as follows: Status 1 2 3 4 Input 1 L L H H Input 2 L H L H Output 1 Output 2 VQL VQL VQH VQH VQL VQH VQL VQH VQL means: Lower power unit conducting; upper power unit blocked. VQH means: Upper power unit conducting; lower power unit blocked. The following examples illustrate the operation: Status 1: Motor is slowed down Status 2: Motor turns right Status 3: Motor turns left Status 4: Motor is slowed down Semiconductor Group 4 1998-02-01 TLE 4203 Circuit Description Input Circuit The control inputs consist of TTL and CMOS-compatible Schmitt triggers with hysteresis. Buffer amplifiers, controlled from these stages, convert the logic signal into the form required for driving the power output stages. Output Stages The output stages consist of two push-pull C stages. Using protective circuits for limiting the power dissipation makes the outputs short-circuit proof to ground and to supply voltage throughout the entire operating range. Positive and negative voltage peaks, which occur when switching inductive loads, are limited by integrated power diodes. Monitoring and Protecting Functions The IC is protected against thermal overloads by a temperature protecting circuit. In addition an internal circuit ensures that all output transistors are blocked for supply voltages below operating range. A monitoring stage logic for each output stage transistor detects whether the relevant transistor is active and in this case for sink operation (source operation) prevents the corresponding source transistor (sink transistor) from being turned on. Direct cross-over currents are effectively prevented with this method. Semiconductor Group 5 1998-02-01 TLE 4203 Absolute Maximum Ratings TC = – 40 to 125 °C Parameter Symbol min. Voltages Supply voltage Logic input voltages Currents Supply current TC ≤ 85 °C Output current TC ≤ 85 °C Ground current TC ≤ 85 °C Temperatures Junction temperature Storage temperature range Thermal resistances system - case system - ambient Operating Range Supply voltage Logic input voltage Case temperature Tj ≤ 150 °C Limit Values max. Unit VS VI 1, 2 – 0.3 – 45 45 45 V V IS IQ 1, 2 IGND – 12 –6 – 12 12 6 12 A A A Tj Tstg Rth SC Rth SA – – 50 – – 150 150 3 65 °C °C K/W K/W VS VI 1, 2 TC 5 – 10 – 40 20 40 125 V V °C Semiconductor Group 6 1998-02-01 TLE 4203 Characteristics VS = 8 to 18 V, Tj = – 25 to 125 °C (typ. VS = 12 V; Tj = 25 °C) Parameter Symbol Limit Values min. typ. General Characteristics Quiescent current Quiescent current Logic Control inputs H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current max. Unit Test Condition Iq Iq – – 70 180 100 230 mA mA VI1 = VI2 > VIH VI1 = VI2 < VIL VIH VIL ∆VI IIH – IIL 2.8 – – – – – – 0.7 – – – 1.2 – 10 10 V V V µA µA – – – VI = 5 V VI = 0.5 V VS = 8 to 18 V, TC = – 25 to 125 °C Switching Stages Saturation voltages to + VS to + VS to + VS to ground to ground to ground Forward Voltages Diode to + VS Diode to + VS Diode of + VS Diode to ground Diode to ground Diode to ground 1) VQSato VQSato VQSato VQSatu VQSatu VQSatu – – – – – – 1.1 1.5 2.5 0.3 0.6 1.6 1.3 1.8 3.5 0.6 1 3.2 V V V V V V VI 1, 2 > VIH; IQ = – 1 A 1) VI 1, 2 > VIH; IQ = – 2 A 1) VI 1, 2 > VIH; IQ = – 4 A 1) VI 1, 2 < VIL; IQ = 1 A VI 1, 2 < VIL; IQ = 2 A VI 1, 2 < VIL; IQ = 4 A – VQFo – VQFo – VQFo – VQFu – VQFu – VQFu – – – – – – 0.95 1.05 1.30 0.95 1 1.20 1.3 1.5 1.8 1.3 1.5 1.8 V V V V V V VI 1/ 2 > VIH; IQ = 1 A 1) VI 1/ 2 > VIH; IQ = 2 A 1) VI 1/ 2 > VIH; IQ = 4 A 1) VI 1/ 2 < VIL; IQ = – 1 A VI 1/ 2 < VIL; IQ = – 2 A VI 1/ 2 < VIL; IQ = – 4 A measured to + VS Semiconductor Group 7 1998-02-01 TLE 4203 Ι q, Ι S 2 6 3 4700 µF 63 V 470 nF Ι Ι1 1 VS Ι Q1 TLE 4203 V Ι1 RL 5 Ι Ι2 7 VΙ2 Ι Q2 VQ2 VQ1 4 ΙM AES00620 Figure 3 Test Circuit VΙ 1 = VΙ 2 VΙ H VΙ L _ t r = t f < 100 ns t td td tt 0t Ι Q2 4A -4 A t AET00621 Figure 4 Timing Diagram 8 1998-02-01 Semiconductor Group TLE 4203 + VS = 12 V 220 nF 1000 µF 2 1 Control Inputs 7 6 220 nF 3 1Ω TLE 4203 5 M 220 nF 4 1Ω AES00622 Figure 5 Application Circuit Semiconductor Group 9 1998-02-01 TLE 4203 Saturation Voltage versus Output Current Short-Circuit Current versus Output Voltage VA = VQ for sink operation VA = VS – VQ for source operation AED00623 ΙQ 250 mA 200 VS =12 V R L=2.4 Ω ΙQ 6 A 5 TC = 25 ˚C AED00625 VΙ 1/2 < V Ι L 150 4 3 VΙ 1 = V Ι 2 100 2 50 VΙ 1/2 > V Ι H 1 0 -50 0 50 100 150 ˚C 200 Tj 0 0 10 20 30 V VQ 40 Saturation Voltage versus Output Current 3.0 AED00624 Diode Forward Voltage versus Output Current 1.4 AED00626 VQ TC = 25 ˚C VQ V V 1.0 VQ Fo VQ Fu 2.0 VQ Sato 0.8 1.5 0.6 TC = 25 ˚C 1.0 VQ Satu 0.4 0.5 0.2 0.0 0.0 0 1 2 3 4 A 5 0 1 2 3 4 A 5 ΙQ ΙQ Semiconductor Group 10 1998-02-01 TLE 4203 Package Outlines P-TO220-7-1 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 3.75 +0.1 4.6 -0.2 1 x 45˚ 1.27 +0.1 2.8 19.5 max 16 ±0.4 8.8 -0.2 2.6 0.4 +0.1 8.4 ±0.4 8.6 ±0.3 15.4 ±0.3 GPT05108 1 1.27 7 0.6 +0.1 1) 0.6 M 7x 4.5 ±0.4 1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Semiconductor Group 11 10.2 ±0.3 Dimensions in mm 1998-02-01 TLE 4203 P-TO220-7-2 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 3.75 +0.1 4.6 -0.2 1 x 45˚ 1.27 +0.1 2.8 11 1 1.27 7 13 0.4 +0.1 0.6 +0.1 1) 2.6 GPT05257 0.6 M 7x 1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Semiconductor Group 12 8.8 -0.2 15.4 Dimensions in mm 1998-02-01