Q67000-S132

BSS 145 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.4 ...2.3 V Pin 1 G Pin 2 S Pin 3 D Type BSS 145 Type BSS 145 VDS 65 V ID 0.22 A RDS(on) 3.5 Ω Package SOT-23 Marking SBs Ordering Code Q67000-S132 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 65 65 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.22 TA = 31 °C DC drain current, pulsed IDpuls 0.88 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 BSS 145 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 65 2 0.1 8 10 1.6 2.3 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.4 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.5 50 µA VDS = 65 V, VGS = 0 V, Tj = 25 °C VDS = 65 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 3.5 6.5 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.2 A VGS = 3.5 V, ID = 0.02 A Semiconductor Group 2 Sep-13-1996 BSS 145 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.12 0.2 60 15 5 - S pF 80 20 8 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50 Ω Rise time tr 6 10 VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50 Ω Turn-off delay time td(off) 12 16 VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50 Ω Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.2 A RGS = 50 Ω Semiconductor Group 3 Sep-13-1996 BSS 145 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.9 0.22 0.88 V 1.4 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.4 A, Tj = 25 °C Semiconductor Group 4 Sep-13-1996 BSS 145 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.24 A 0.20 0.40 W Ptot 0.32 0.28 ID 0.18 0.16 0.24 0.20 0.16 0.12 0.14 0.12 0.10 0.08 0.06 0.08 0.04 0.04 0.00 0 20 40 60 80 100 120 °C 160 0.02 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 77 V 74 V(BR)DSS 72 70 68 66 64 62 60 58 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 Sep-13-1996 BSS 145 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.50 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 11 Ptot = 0W l k jh g i f VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 Ω RDS (on) 9 8 7 6 5 4 3 2 b a b c d ID 0.40 0.35 0.30 0.25 0.20 0.15 c e c d e f g dh i j k l 0.10 0.05 0.00 a VGS [V] = e f g hj i k c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 1 0 V 5.0 a 2.5 3.0 b 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.38 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 1.0 A 0.40 S ID 0.8 0.7 0.6 0.5 0.4 0.3 gfs 0.30 0.25 0.20 0.15 0.10 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS A ID 0.9 Semiconductor Group 6 Sep-13-1996 BSS 145 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.2 A, VGS = 10 V 9 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 7 6 5 VGS(th) 3.6 3.2 2.8 98% 4 3 2 1 0 -60 -20 20 60 100 °C 160 2.4 2.0 1.6 98% typ 2% typ 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 0 pF C 10 2 A IF 10 -1 Ciss 10 1 Coss 10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 10 -3 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-13-1996 BSS 145 Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 Sep-13-1996